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PUBLICATIONS
  1. "SiGe Field Effect Transistors", Y.H.Xie, Mat. Sci. & Eng., R25, 89 (1999).
  2. "Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si", L.P. Rokhinson, D.C. Tsui, J.L.Benton, and Y.H.Xie, Appl. Phys. Lett. 75, 2413 (1999).
  3. "The Quantized Hall Insulator", M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and M.Shayegan, J. Chem. Phys. Semicond.,
  4. " Experimental Evidence for a two-dimensional quantized Hall insulator", M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and Don Monroe, Nature, 395, 675 (1998).
  5. "An Approach For Fabricating High Performance Inductors On Low Resistivity Substate", Y.H. Xie, M.R. Frei, A.J. Becker, C.A. King, D. Kossives, L.T. Gomez, and S.K. Theiss, IEEE Journ. Solid State Circuits, 33, 1433 (1998);
  6. "Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si", G.P.Watson, J.L.Benton, Y.H.Xie, and E.A.Fitzgerald, Appl. Phys. Lett., 83, 3773 (1998);
  7. "Symmetry in the insulator - quantum Hall - insulator transitions observed in a Ge/SiGe quantum well", M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and Don Monroe, Phys. Rev. B; 56, 15545 (1997);
  8. "Relaxed Template for Fabricating Regularly Distributed Quantum Dot Arrays", Y.H.Xie, S.B.Samavedam, M. Bulsara, T.A.Langdo, and E.A.Fitzgerald, Appl. Phys. Lett., 71, 3567 (1997);
  9. "Energy relaxation of two-dimensional carriers in strained Ge/SiGe and Si/SiGe quantum wells: evidence for two-dimensional acoustic phonons", S.H.Song, W.Pan, D.C.Tsui, Y.H.Xie, and Don Monroe, Appl. Phys. Lett., 70, 3422 (1997);
  10. "Influence of strain on semiconductor thin film epitaxy", E.A.Fitzgerald, S.B.Samavedam, Y.H.Xie, and L.M.Giovane, J. Vac. Sci. Technol. A, 15(3), 1048 (1997);
  11. "Stress and temperature dependence of misfit dislocation nucleation rate in SiGe alloys: evidence of homogeneous nucleation", S.M.Labovitz, Y.H.Xie, and D.P.Pope, Proc. Mat. Res. Soc., Spring, 1997;
  12. "New Universality at the Magnetic Field Driven Insulator to Integer Quuantum Hall Effect Transitions", S.H.Song, D.Shahar, D.C.Tsui, Y.H.Xie, and Don Monroe, Phys. Rev. Lett., 78, 2200 (1997);
  13. "Strain field imaging on Si/SiGe(001)-(2x1) surfaces by low energy electron microscopy and scanning tunneling microscopy", D.E.Jones, J.P.Pelz, Y.Hong, I.S.T.Tsong, Y.H.Xie, and P.J.Silverman, Appl. Phys. Lett., 69, 3245, (1996).
  14. "Study of electrically active defects in relaxed GeSi films using a near field scanning optical microscope", J.W.P.Hsu, E.A.Fitzgerald, Y.H.Xie, and P.J.Silverman, J. Appl. Phys., 79, 7743, (1996).
  15. "Steady-state and time-resolved spectroscopy of silicon nanostructures", S.V.Gaponenko, E.P.Petrov, U.Woggon, O.Wind, C.Klingshirn, Y.H.Xie, I.N.Germanenko, and A.P.Stupak, J. Lumin., 70, 364 (1996);
  16. "Influence of Ga vs. As prelayers on GaAs/Ge Growth Morphology", Q.Xu, J.W.P.Hsu, E.A.Fitzgerald, J.M.Kuo, Y.H.Xie, and P.J.Silverman, J. Electron, Mat. 25(6), 1009 (1996).
  17. "Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfaces", Surf. Sci., 341, L1005, (1995).
  18. "The Role of Strain in Silicon-Based Molecular Beam Epitaxy", Y.H.Xie and P.J.Silverman, J. Crystal Growth, 157, 113, (1995).
  19. "Enhanced Step Waviness on SiGe (001)-(2x1) Surfaces Under Tensile Strain", D.E.Jones, J.P.Pelz, Y.H.Xie, P.J.Silverman, and G.H.Gilmer, Phys. Rev. Lett., 75 , 1570, (1995).
  20. "Step Energies and Surface Roughening Under Bulk Strain", Y.H.Xie, G.H.Gilmer, C.Roland, P.J.Silverman, S.K.Buratto, J.Y.Cheng, E.A.Fitzgerald, A.R.Kortan, S.Schuppler, M.A.Marcus, and P.H.Citrin, Phys. Rev. Lett., 74, 4963, (1995).
  21. "Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si", S.Schuppler, S.L.Friedman, M.A. Marcus, D.L.Adler, Y.H.Xie, F.M.Ross, T.D.Harris, W.L.Brown, Y.J.Chabal, P.J.Szajowski, E.E.Chaban, L.E.Brus, and P.H.Citrin, Mat. Res. Soc. Symp. Proc., 358, 407 (1995).
  22. "Fabrication and Application of Relaxed Buffer Layers", Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, Mats. Sci. Engr., B30 , 201 (1995).
  23. "Photodegradation of the luminescence of porous silicon during pulsed excitation", Y.H.Xie, I.N.Germanenko, V.F.Voronin, and S.V.Gaponenko, Semiconductors, 29, 350, (1995).
  24. "Antidot Superlattices in Two-dimensional Hole Gases Confined in Strained Germanium Layers", D.Tobben, M.Holzmann, G.Abstreiter, A.Kriele, H.Lorenz, J.P.Kotthaus, F.Schaffler, Y.H.Xie, P.J.Silverman, and Don Monroe, Semicond. Sci. Techn., 10, 1413, (1995).
  25. "Electron trapping kinetics at dislocations in relaxed Ge 0.3Si 0.7/Si heterostructures", E.A. Fitzgerald, G.P. Watson, Y.H. Xie, P.N. Grillot, S.A. Ringel, J. Appl. Phys., 77, 3248 (1995).
  26. "Size, Shape, and Composition of Luminescent Species in Oxidized Si Nanoclusters and H-Passivated Porous Si", S.Schuppler, S.L.Friedman, M.A. Marcus, D.L.Adler, Y.H.Xie, F.M.Ross, Y.J.Chabal, T.D.Harris, L.E.Brus, W.L.Brown, E.E.Chaban, P.J.Szajowski, S.B.Christman and P.H.Citrin, Phys. Rev. B, 52(7) , 4910 (1995).
  27. "Polarization of porous silicon luminescence", S.V.Gaponenko, V.K.Kononenko, E.P.Petrov, I.N.Germanenko, A.P.Stupak, and Y.H.Xie, Appl. Phys. Lett., 67, 3019, (1995).
  28. "Minority and Majority Carrier Trapping in Strain Relaxed Ge0.3 Si0.7/Si Heterostructures Diodes Grown by Rapid Thermal Chemical-Vapor Deposition", P.N.Grillot, S.A.Ringel, E.A. Fitzgerald, G.P. Watson, and Y.H. Xie, J. Appl. Phys. Lett., 77, 676 (1995).
  29. "Dimension of Luminescent Oxidized and Porous Silicon Structures", S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler, Y.H. Xie, S.M. Ross, T.D. Harris, W.L. Brown, Y.J. Chabal, L.E. Brus, P.H. Citrin, Phys. Rev. Lett., 72(16), 2648 (1994);
  30. "Bulk Strain Induced Effects on Si/Ge(100) Surface Roughness", Y.H. Xie, G.H. Gilmer, C.M. Roland, P.J. Silverman, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, M.A. Marcus, P.H. Citrin, Proc. ICPS'94,
  31. "Implication of Silicon Nanocrystallites from Combined Absorption and Luminescence Studies of Free-Standing Porous Silicon Films", Y.H. Xie, M.S. Hybertson, W.L. Wilson, Japan. J. Appl. Phys., 34, Suppl. 34-1, 257 (1994).
  32. "Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain", Y.H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman, S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler, M.A. Marcus, P.H. Citrin, Phys. Rev. Lett., 73, 3006 (1994);
  33. "Near-Field Scanning Optical Microscopy Imaging of Individual Threading Dislocations on Relaxed Gex Si1-x Films", J.W.P. Hsu, E.A. Fitzgerald, Y.H. Xie, P.J. Silverman, Appl. Phys. Lett., 65(3), 344 (1994);
  34. "The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-type Si0.7 Ge0.3 ", G.P. Watson, D.P. Monroe, J.Y. Cheng, E.A. Fitzgerald, Y.H. Xie, R.B. van Dover, Proceedings of Fall Materials Research Society Meeting, Boston, MA, 1994.
  35. "Absorption and Luminescence Studies of Free-standing Porous Silicon Films," Y.H. Xie, M.S. Hybertsen, W.L. Wilson, S.A. Ipri, G.E. Carver, W.L. Brown, E. Dons, B.E. Weir, A.R. Kortan, G.P. Watson, and A.J. Liddle, Phys. Rev. B, 49(8), 5386 (1994);
  36. "From Relaxed GeSi Buffers to FETs: Current Status and Future Prospects", Y.H. Xie, E.A. Fitzgerald, D.P. Monroe, G.P. Watson, P.J. Silverman, Japanese Journal of Appl. Phys., part I, 33, 2372 (1994).
  37. "Light Emission From Silicon", S.S.Iyer and Y.H.Xie, Chapter 4 of the book "Porous Silicon", Z.C.Feng and R.Tsu, Ed., World Scientific Pub., New Jersey, 1994.
  38. Relaxed, low threading defect density Si0.7 Ge0.3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition, G.P.Watson, E.A.Fitzgerald, Y.H.Xie, D.P.Monroe, J. Appl. Phys., 75(1), 263 (1994).
  39. Light Emission From Silicon, S.S. Iyer, Y.-H. Xie, Science, 260, 40 (1993).
  40. "Gas/Source Molecular Beam Epitaxy of InGaP and GaAs on Strain-Relaxed GexSi1-x /Si," J.M. Kuo, E.A. Fitzgerald, Y.H. Xie, P.J. Silverman; J. Vac. Sci. Technol. B, 11(3), 857 (1993);
  41. "Electronic Characterization of Dislocations in RTCVD Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy", G.P. Watson, E.A. Fitzgerald, Y.H. Xie, P.N. Grillot, S.A. Ringel, Proceedings Materials Research Society Fall Meeting, Boston, MA, Nov/Dec, 1993.
  42. "Defect Control in Relaxed, Graded GeSi/Si," E.A. Fitzgerald, Y.-H. Xie, D.P. Monroe, G.P. Watson, J.M. Kuo, P.J. Silverman, Proceedings of ICDS'17, Gmunden, Austria, 7/19-23, 1993;
  43. "Very High Mobility Two-Dimensional Hole Gas in Si/GexSi1-x/Ge Structures Grown by Molecular Beam Epitaxy," Y.-H. Xie, D.P. Monroe, E.A. Fitzgerald, P.J. Silverman, F.A. Thiel, G.P. Watson, Appl. Phys. Lett., 63(16), 2263 (1993);
  44. "The Necessity of Ga Pre-Layers in GaAs/Ge Growth Using Gas-Source Molecular Beam Epitaxy," E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, P.J. Silverman, Appl. Phys. Lett., (1993);
  45. "Comparison of Mobility-limiting Mechanisms in High-mobility Si1-x Gex heterostructures," D. Monroe, Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, and G.P. Watson, J. Vac. Sci. Technol. B, 11(4), 1731 (1993);
  46. "Correlation Between Defect Density and Process Variables in Step-Graded Relaxed Si0.7Ge0.3 Grown on Si by RTCVD," G.P. Watson, E.A. Fitzgerald, B. Jalali, Y.-H. Xie, B.E. Weir, Proc. Mat. Res. Soc., Spring 1993;
  47. "Unimportance of Siloxane in Luminescense of Porous Silicon," S.L. Friedman, M.A. Marcus, D.L. Adler, Y.-H. Xie, T.D. Harris, P. Citrin, Appl. Phys. Lett., 62(16), 1934 (1993);
  48. "Fabrication of High Mobility Two-Dimensional Electron and Hole Gases," Y.-H. Xie, E.A. Fitzgerald, D.P. Monroe, P.J. Silverman, G.P.Watson, J. Appl. Phys., 73(12), 8364 (1993);
  49. "Controlled Misfit Dislocation Nucleation in Si0.90 Ge0.10 Epitaxial Layers Grown on Si," G.P. Watson, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, A.E. White, K.T. Short, Appl. Phys. Lett., 63(6), 746 (1993);
  50. "Process and Defect Induced Surface Morphology of Relaxed SiGe Films," J.W.P. Hsu, M. Cardillo, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, Scan. Probe Microscopies II, 118 (1993);
  51. "Gas Source Molecular Beam Epitaxy of InGaP and GaAs on Strained-Relaxed GexSi1-x /Si," J.M. Kuo, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, J. Vac. Sci. Technol. B, 11(3), 857 (1993);
  52. "Characterization of Compositionally Graded Si1-x Gex Alloy Layers by Photoluminescence Spectroscopy and by Cathodoluminescence Spectroscopy and Imaging", V. Higgs, E.C. Lightowlers, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, J. Appl. Phys., 73, 1952 (1993).
  53. "Quanticized Hall Effects in High Electron Mobility Si/Ge Structures", D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J. Silverman, Phys. Rev., B46, 7935 (1992).
  54. "Photoluminescence Investigations of Graded, Totally Relaxed Gex Si 1-x Structures," J.Michel, E.A.Fitzgerald, Y.H.Xie, P.J.Silverman, M.Morse and L.C.Kimerling, J. Electron. Mat., 21, 1099 (1992).
  55. "Transport in High-Mobility Si1-x Gex Heterostructures Grown by Molecular Beam Epitaxy," D.P. Monroe, Y.-H. Xie, E.A. Fitzgerald, P.J. Silverman, Proc. Mat. Res. Soc., Fall (1992);
  56. "Advances in Silicon Based Heterostructures and Very High Mobility Two-Dimensional Carrier Gases", Y.-H. Xie, E.A. Fitzgerald, D.P. Monroe, P.J. Silverman, A.R. Kortan, B.E. Weir, F.A. Thiel, G.P. Watson, L.C. Feldman, Proc. 21st Internat. Conf. Phys. Semicond., Beijing, China, 1992.
  57. "Fabrication of Relaxed GeSi Buffer Layers on Si (100) With Low Threading Dislocation Density," Y.H.Xie, E.A.Fitzgerald, P.J.Silverman, A.R.Kortan and B.E.Weir, Mat. Sci. & Eng., B14, 332 (1992).
  58. "Surface Morphology of Relaxed Gex Si1-x Films", J.W.P. Hsu, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, M.J. Cardillo, Appl. Phys. Lett., 61, 1293 (1992).
  59. "Luminescence and Structural Study of Porous Silicon Films", Y.H. Xie, W. L. Wilson, F. M. Ross, J. A. Mucha, E. A. Fitzgerald, J. M. Macaulay, T. D. Harris, J. Appl. Phys., 71, 2403 (1992).
  60. "Extremely High Electron Mobility in Si/Gex Si1-x Structures Grown by Molecular Beam Epitaxy", Y.J. Mii, Y.-H. Xie, E. A. Fitzgerald, D. Monroe, F. A. Thiel, B. E. Weir, and L. C. Feldman, Appl. Phys. Lett., 59, 1611 (1991).
  61. "Evaluation of Erbium Doped Silicon for Optoelectronic Applications", Y.-H. Xie, E.A. Fitzgerald, and Y.-J. Mii, J. Appl. Phys., 70, 3223 (1991).
  62. "Molecular Beam Epitaxial Growth of Very High Mobility Two Dimensional Electron Gases in Si/GeSi Heterostructures", Y.-H. Xie, E.A. Fitzgerald, Y.-J. Mii*, D. Monroe, F. A. Thiel, B.E. Weir, L.C. Feldman, Proc. Mat. Res. Soc. Symp., 220 , 413 (1991).
  63. "Strain-Free Gex Si1-x Layers with Low Threading Dislocation Densities Grown on Si strates", E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, Y.-J. Mii*, J. Michel*, B.E. Weir, L.C. Feldman, J.M. Kuo, Proc. Mat. Res. Soc. Symp., 220, 211 (1991).
  64. "Dopant Enhancement of the 1.54 mm Emission of Erbium Implanted in Silicon", J. Michel*, L.C. Kimerling, J.L. Benton, D. J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J. M. Poate, Y.-H. Xie, and R.F. Ferrante, Proc. Internat. Conf. Defects and Semicond., Leigh, PA, 1991.
  65. "Growth of Gex Si1-x /Si Alloys on Si(100), (110) and (111) Surfaces", R. Hull, J.C. Bean, L. Peticolas, Y.-H. Xie, Y.-F. Shieh, Proc. Mat. Res. Soc. Symp., 220, 153 (1991).
  66. "Columnar Structure Growth by Silicon Molecular Beam Epitaxy", Y.-H. Xie, G.H. Gilmer, and E.A. Fitzgerald, Proc. Mat. Res. Soc. Symp., 220, 41 (1991).
  67. "The Electrical and Defect Properties of Erbium-Implanted Silicon", J.L. Benton, J. Michel, L.C. Kimerling, D.C. Jacobson, Y.-H. Xie, D.J. Eaglesham, E.A. Fitzgerald, and J.M. Poate, J. Appl. Phys., 70, 2667 (1991).
  68. "Strain Relaxation in Ge.09 Si .91 Epitaxial Thin Films Measured by Wafer Curvature", C.A. Volkert, E.A. Fitzgerald, R. Hull, Y.-H. Xie, and Y.-J. Mii, J. Electron. Mats., 20, 833 (1991).
  69. "Totally Relaxed Gex Si11-x Layers with Low Threading Dislocation Densities Grown on Si Substrates", E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, and B.E. Weir, Appl. Phys. Lett., 59, 811 (1991).
  70. "The Microstructure of Erbium-Implanted Si", D. J. Eaglesham, J. Michel, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, J.L. Benton, A. Polman, Y.-H. Xie, L.C. Kimerling, Appl. Phys. Lett., 58, 2797 (1991).
  71. "Epitaxially Stabilized Gex Sn1-x Diamond Cubic Alloys", E.A. Fitzgerald, P.E. Freeland, M. T. Asom, W. Lowe, R. MacHarrie, B. E. Weir, A. R. Kortan, F.A. Thiel, Y.-H. Xie, A. M. Sergent, S. L. Cooper, G. A. Thomas, and L.C. Kimerling, J. Elec. Mats., 20, 489 (1991).
  72. "Impurity Enhancement of the 1.54 mm Er 3+ Luminescene in Silicon," J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J.M. Poate, and L. C. Kimerling, J. Appl. Phys., 70, 2672 (1991).
  73. "Selective Epitaxial Growth in Deep Trenches for Integrated Photodetector Applications," Y. H. Xie, R. P. Jindal, J. L. Benton, C. L. Paulnack, P. H. Langer and A. J. Miller, J. Electrochem. Soc., 137, 3559 (1990).
  74. "Reduction of Defect Density in Heteroepitaxial Gex Si1-x Grown on Patterned Si Substrates,"E. A. Fitzgerald, P. E. Freeland and Y. H. Xie, Mat. Res. Soc. Symp. Proc., 160, 59 (1990).
  75. "A Re-evaluation of Hetero-Epitaxy of Continuous Films on Patterned Substrates," Y. H. Xie, Thin Solid Films, 188, L1 (1990).
  76. "From Porous Si to Patterned Si strates: Can Misfit Strain Energy in a Continuous Heteroepitaxial Film be Reduced?" Y. H. Xie and J. C. Bean, J. Vac. Sci. Technol., B8, 227, (1990).
  77. "Heteroepitaxy of Gex Si1-x on Porous Si Substrates," Y. H. Xie and J. C. Bean, J. Appl. Phys., 67(2), 792 (1990).
  78. "Hydrogenation of Molecular Beam Epitaxial Ge0.36 Si0.64 on Si," Y. H. Xie, H. S. Luftman, J. Lopata and J. C. Bean, Appl. Phys. Lett., 55(7), 684 (1989).
  79. "Summary Abstract: Evidence for a Piezoelectric Effect in Coherently Strained Ge0.2 Si0.8 Alloys on Si(001)," Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, J. Vac. Sci. Technol., B5, 744 (1987).
  80. "Power Loss by Two-Dimensional Holes in Coherently Strained Ge0.2 Si0.8 /Si Heterostructures: Evidence for Weak Screening," Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, Appl. Phys. Lett., 49(5), 283 (1986).
  81. "Deep-Level Defect Study of Molecular Beam Epitaxially Grown Silicon Films," Y. H. Xie, Y.Y. Wu and K. L. Wang, Appl. Phys. Lett., Jan. 27, (1986).
  82. "Uniformity and Crystalline Quality of CoSi2 /Si Heterostructures Grown by Molecular Beam Epitaxy and Reactive Deposition Epitaxy," Y. C. Kao, M. Tejwani, Y. H. Xie, T. L. Lin and K. L. Wang, J. Vac. Sci. Technol., B3(2), 596 (1985).
  83. "Characterization of Deep-Level Defects in Silicon Films Growth by Molecular Beam Epitaxy (MBE)," Y. H. Xie, Y.Y. Wu and K. L. Wang, Proc. First Internat. Symp. Silicon Molecular Beam Epitaxy (ECS), p.93, Toronto, Canada, (1985).
  84. "An Investigation on Surface Conditions for Si Molecular Beam Epitaxy (MBE) Growth," Y. H. Xie, K. L. Wang and Y. C. Kao, J. Vac. Sci. Technol., A3(3), 1035 (1985).

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SELECTED TALKS

"Physical pathway towards self-assembled nanostructures", Y.H.Xie, 1999 Canadian Society of Chemistry, Symposium on Semiconductor Nanostructure, to be held in Toronto, Canada; (INVITED);

"Preferential Nucleation of 3D Islands Over Misfit Dislocation Networks", Y.H.Xie, S.B.Samavedam, T.A.Langdo, and E.A.Fitzgerald, 7th International Symposium on Si MBE, 7/14-7/17/97, Banff, Canada;

"An Approach For Fabricating Uniform, Self-Organized, Quantum Dot Arrays By Epitaxy", Y.H.Xie, S.B.Samavedam, T.A.Langdo, and E.A.Fitzgerald, 1997 Electronic Materials Conference, 6/25-6/27/97, Fort Collins, CO;

"Polarized Near-field Photocurrent Study of Surface Strain in Relaxed GeSi Films", M.H.Gray, J.W.P,.Hsu, E.A.Fitzgerald, Y.H.Xie, and P.J.Silverman, 1997 Electronic Materials Conference, 6/25-6/27/97, Fort Collins, CO;

"The Role of Strain in Silicon-Based Molecular Beam Epitaxy," Y.H.Xie, and P.J.Silverman, Spring Meeting of European Material Research Society, Strasbourg, France, 5/22-5/26/1995. (INVITED)

"Bulk Strain and Surface Step Energies: Evolution of Morphology and Segregation Behaviors in Gex Si1-x Materials" Y.H. Xie, G.H.Gilmer, C.Roland, D.E.Jones, J.P.Pelz,

Z.H.Lu, P.J.Silverman, and E.A.Fitzgerald, Spring Meeting of the Materials Research Society, San Francisco, CA, 4/17-4/21/95.

"The Implication of Si Nanoclusters from the Combined Absorption and Luminescence Studies of Free-Standing Porous Si Films," Y.H. Xie, International Conference on Optical Properties of Nanostructures (OPN'94), Sendai, Japan, 9/18-22, 1994. (INVITED)

"High Mobility Transport in Strained Si and Ge," Y.H. Xie, Physics and Chemistry of Semiconductor Interfaces '94, Mohonk, NY, 1/24-28,1994, (INVITED).

"Critical Issues for Relaxed GeSi Buffer Layers," Y.H. Xie, TEM International Symposium on Defects at Hetero-Interfaces, San Francisco, CA, (*Minerals, Metals, Materials), 2/28-3/2/94, (INVITED).

"Absorption and Luminescence Studies of Free-Standing Porous Silicon Films," Y.-H. Xie, S.A. Ipri, B.E. Weir L.C. Feldman, M.S. Hybertsen, W.L. Brown, Materials

Research Society Spring Mtg., San Francisco, CA, 4/12-4/16/93.

"High Mobility Two-Dimensional Electron/Hole Gases on Relaxed GeSi Buffer Layers: Material Issues and Device Potentials," Y.-H. Xie , 1993 International Conference on Solid State Devices and Materials at Chiba, Japan, 8/29-9/2/93. (INVITED)

"MBE Growth of High Mobility Two-Dimensional Hole Gases on Relaxed GeSi Buffers," Y.H.Xie, Don Monroe, E.A.Fitzgerald, P.J.Silverman, and G.P.Watson, Electron Materials Conference, 6/23-6/25/93.

"Si-based Light Emitters: Is Erbium Doping a Top Contender?" Y.H.Xie, 39th National Symp. of Amer. Vac. Soc., Chicago, Il, 11/9-13, 1992. (INVITED)

"Light Emission from Si-based Materials," Y.H.Xie, 182nd Electrochem. Soc. Mtg, Toronto, Canada, 10/11-16, 1992. (INVITED panelist in the Rump Session)

"Current Understanding on the Luminescence Mechanism of Porous Silicon," Y.-H. Xie, 1992 International Conference on Solid State Devices and Materials, Tsukuba Science City, Japan, 8/26-28, 1992 (INVITED).

"The Advance of Silicon Based Heterostructures and Very High Mobility of Two-Dimensional Electron Gases," Y.-H. Xie, 21st International Conference on the Physics of Semiconductors, Beijing, China, 8/10-15, 1992 (INVITED).

"The Advance of Si-based Heteroepitaxy: Strain Relaxation and Electronic Properties," Y.H.Xie, Symp. on Strain Relaxation and Growth Modes for Mismatched Systems, Scanning Microscopy-92, Chicago, Il, 05/12-13, 1992. (INVITED)

"Luminescence and Structural Study of Porous Silicon Films," Y.-H. Xie, International Workshop on Atoms and Clusters, Atami, Japan, 01/08-10, 1992 (INVITED).

"Molecular Beam Epitaxial Growth of Very High Mobility Two-dimensional Electron Gases in Si/GeSi Heterostructures," Y.-H. Xie, E.A. Fitzgerald, Y.-J. Mii, D. Monroe, F. Thiel, B.E. Weir, and L.C. Feldman, MRS Spring Mtg., Anaheim, CA, 04/29-05/03/91.

"Luminescence and Structural Study of Porous Silicon Films," Y.-H. Xie, W.L. Wilson, F.M. Ross, J.A. Mucha, and E.A. Fitzgerald, Materials Research Soc. Symp AA "Light Emission from Si", Boston, MA, 12/02-06, 1991.

"Extremely High Two-dimensional Electron Mobility in Si/GeSi Grown by Molecular Beam Epitaxy," Y.H.Xie, E.A.Fitzgerald, D.Monroe, Y.J.Mii, F.A.Thiel, B.E.Weir and L.C.Feldman, 22nd IEEE Semiconductor Interface Specialist Conf., Orlando, FL, 12/11-13, 1991. (INVITED)

"Totally Relaxed Gex Si1-x on Si: The Effect of Compositioal Grading," Y.-H. Xie, E.A. Fitzgerald, Y.-J. Mii, A.R. Kortan, J. Michel, B.E. Weir, M.L.reen, and D. Brasen,

Elec. Mats. Conf., Univ. of Colorado, Boulder, CO, 06/19-21/91.

"Columnar Structure Growth by Silicon Molecular Beam Epitaxy," Y.-H. Xie, G.H. Gilmer, E.A. Fitzgerald, and J. Michel, MRS Spring Mtg., Anaheim, CA, April 29, 1991.

"Evidence of Defect Density Reduction in Structures Grown on Relaxed Gex Si1-x Buffer Layers," Y.-H. Xie, NSF Workshop on "Epitaxy, Interfaces, Defects, and Processing of Electronic Materials", Pittsburgh, PA, 11/4-8, 1991. (INVITED)

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PATENTS

Application filed on November 26, 1999: "A Process for Fabricating an Optical Device", A. Bruce, A. Glebov, J. Shmulovich, and Y.H. Xie;

Application filed on August 24, 1999: "Optical Device Formed On A Substrate With Thermal Isolation Regions Formed Therein", A.J. Bruce, A. Glebov, J. Shmulovich, and Y.H. Xie;

Application filed on Nov. 4, 1998: "Substrate Optimization for Hig-Q Inductors Integrated in CMOS/BiCMOS Technology", V.D.Archer, D.J.Eaglesham, M.Frei, K.Krisch, K.K.Ng, M.R.Pinto and Y.H.Xie;

Application filed on March 15, 1999: "An Inductor or Low Loss Interconnect and A Method of Manufacturing An Inductor or Low Loss Interconnect in an Integrated Circuit" N. Belk, william Cochran, Michel Frei, David Goldthorp, Shahriar Moinian, Kwok Ng, Mark Pinto, and Ya-Hong Xie;

Application filed on March 13, 1998: "A Process For Fabricating A Device With Shallow Junctions", M.Frei, H.H.Vuong, and Y.H.Xie;

US Patent Number 5,888,885, 3/30/1999, "Method for fabricating three-dimensional quantum dot arrays and resulting products", Y.H.Xie;

US Patent Number 5,767,561, 6/16/1998, "Integrated circuit device with isolated circuit elements", M.Frei, C.A.King, K.K.Ng, H.T.Weston and Y.H.Xie;

US Patent Number 5,736,749, 4/7/1998, "Integrated Circuit Device with Inductor Incorporated Therein", Y.H.Xie;

US Patent Number 5,442,205, 8/15/1995, "Semiconductor Heterostructure Devices with Strained Semiconductor Layers (Continuation-in-Part)", D. Brasen, E.A. Fitzgerald, M.L. Green, D.P. Monroe, P.J. Silverman, and Y.H. Xie;

US Patent Number 5,308,444, 5/3/1994, "Method of Making Semiconductor Heterostructure of Gallium Arsenide on Germanium", E.A. Fitzgerald, J.M. Kuo, P.J. Silverman and Y.H. Xie;

US Patent Number 5,239,193, 8/24/1993, "Silicon Photodiode for Monolithic Integrated Circuits," J.L. Benton, R.P. Jindal, and Y.H. Xie;

US Patent Number 5,221,413, 6/22/1993, "Method for Making Low Defect Density Semiconductor Heterostructure and Devices Made Thereby," D. Brasen, E.A. Fitzgerald, M.L. Green, and Y.H. Xie;

US Patent Number 5,141,878, 8/25/1992, "Silicon Photodiode for Monolithic Integrated Circuits and Method for Making Same," J.L. Benton, R.P. Jindal and Y.H. Xie.

US Patent Number 5,063,569, 11/5/1991, "Vertical-cavity Surface-emitting Laser with Non-epitaxial Multilayered Dielectric Reflectors Located on Both Surfaces," Y.H. Xie.

US Patent Number 5,012,486, 4/30/1991, "Vertical Cavity Semiconductor Laser With Lattice-Mismatched Mirror Stack," S. Luryi and Y. -H. Xie.

US Patent Number 4,999,843, 3/12/1991, "Vertical Semiconductor Laser With Lateral Electrode Contact," S. Luryi and Y. -H. Xie.

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