UCLA-Materials Science Electronic Thin Film Lab at UCLA
 
 
























  
  

Journal Publications (322)


a. Diffusion and Reactions in Solder Alloys (56)
b. Silicide Formation (100)
c. Electrical Properties and Schottky barrier of Silicides (39)
d. Diffusion and Reactions in Metallic Thin Films (38)
e. Diffusion and Reactions in Si, SiO2 and Low k Materials (31)
f. Diffusion and Reactions in High Tc Superconducting Oxide (15)
g. Phase Change Driven by High Electric and Magnetic Field (8)
h. Electromigration and Creep (22)
i. Kinetic Theory of Flux-driven Phase Changes (3)
j. Miscellaneous (10)


a. Diffusion and Reactions in Solder Alloys

  1. K.N. Tu and D. Turnbull, "Morphology of Cellular Precipitation of Tin from Lead-Tin Bicrystals," Acta Met. 15, 369 (1967).
  2. K.N. Tu and D. Turnbull, "Morphology of Cellular Precipitation of Tin from Lead-Tin Bicrystals - II," Acta Met. 15, 1317 (1967).
  3. K.N. Tu and D. Turnbull, "Analysis of Kinetics of Boundary Diffusion Limited Cellular Precipitation," Scripta Met., 1, 173 (1967).
  4. K.N. Tu and D. Turnbull, "Morphology and Structure of Tin Lamellae Formed by Cellular Precipitation," Acta Met. 16, 1263 (1969).
  5. K.N. Tu and D. Turnbull, "Direct Observation of Twinning in Tin Lamellae," Acta Met. 18, 915 (1970).
  6. K.N. Tu and D. Turnbull, "Morphology and Kinetics of Cellular Dissolution in Pb-Sn Alloys," Metal Trans. 2, 2509 (1971).
  7. K.N. Tu, "The Cellular Reaction in Lead-Tin Alloy," Metal Trans. 3, 2769 (1972).
  8. K.N. Tu, "Interdiffusion and Reaction in Bimetallic Cu-Sn Thin Films," Acta Met. 21, 347 (1973).
  9. K.N. Tu and D.A. Chance, "Thin Film Reactions of Pb with AgAu and AgPd Alloys," J. Appl. Phys. 46, 3229 (1975).
  10. D.R. Campbell, K.N. Tu and R.E. Robinson, "Interdiffusion in a Bulk Couple of Pb-PbIn Alloy," Acta Met. 24, 609 (1976).
  11. K.N. Tu, Kinetics of Thin-film Reactions Between Pb and the AgPd Alloy," J. of Appl. Phys. 48, 3400 (1977).
  12. K.N. Tu, "Single Intermetallic Compound Formation in Pd-Pb and Pd-Sn Thin film Couples Studied by X-ray Diffraction," Materials Letters, 1, 6 (1982).
  13. K.N. Tu and R.D. Thompson, "Kinetics of Interfacial Reaction in Bimetallic Cu-Sn Thin Films," Acta Met. 30, 947 (1982).
  14. Z. Kovac and K.N. Tu, "Immersion Tin: its Chemistry, Metallurgy and Application in Electronic Packaging Technology," IBM J. of Research and Development, 28, 726-734 (1984).
  15. K.N. Tu, "Irreversible processes of spontaneous whisker growth in bimetallic Cu-Sn thin film reactions" Phys. Rev. B49, 2030-2034 (1994).
  16. H. K. Kim, H. K. Liou, and K. N. Tu, "Morphology of instability of wetting tips of eutectic SnBi , eutectic SnPb, and pure Sn on Cu," J. of Materials Research, 10. 497-504 (1995).
  17. Y. Wang, H. K. Kim, H. K. Liou, and K. N. Tu, "Rapid soldering reactions of eutectic SnBi and eutectic SnPb solder on Pd surfaces," Scripta Metall. And Mater., 32, 2087-2092 (1995).
  18. Y. Wang and K. N. Tu, "Ultra-fast intermetallic compound formation between eutectic SnPb and Pd where the intermetallic is not a diffusion barrier," Appl. Phys. Lett., 67, 1069-071 (1995).
  19. H. K. Kim and K. N. Tu, "Rate of consumption of Cu soldering accompanied by ripening," Appl. Phys. Lett., 67, 2002-2004 (1995).
  20. H. K. Kim and K. N. Tu, "Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening," Phys. Rev. B53, 16027- 16034 (1996).
  21. Ann A. Liu, H. K. Kim, K. N. Tu, and P. A. Totta, "Spalling of Cu6Sn5 spheroids in the soldering reaction of eutectic SnPb on Cr/Cu/Au thin films," J. Appl. Phys.,80, 2774-2780 (1996).
  22. K. N. Tu, "Cu/Sn interdiffusion reactions: thin film case vs bulk case," Materials Chemistry and Physics, 46, 217-223 (1996).
  23. H. K. Kim, K. N. Tu, and P. A. Totta, "Ripening-assisted asymmetric spalling of Cu-Sn compound spheroids in solder joints on Si wafers," Appl. Phys. Lett. 68, 2204-2206 (1996).
  24. P. G. Kim and K. N. Tu, "Morphology of wetting reaction of eutectic SnPb solder on Au foils," J. Appl. Phys., 80, 3822-3827 (1996).
  25. C. Y. Liu, K. H. Kim, K. N. Tu, and P. A. Totta, "Dewetting of molten Sn on Au/Cu/Cr thin film metallization," Appl. Phys. Lett., 69, 4014-4016 (1996).
  26. H. K. Kim, H. K. Liou, and K. N. Tu, "Three-dimension morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu," Appl. Phys. Lett., 66, 2337-2339 (1995).
  27. P. G. Kim, K. N. Tu, and D. C. Abbott, "Effect of Pd thickness on soldering reaction between eutectic SnPb and plated Pd/Ni thin films on Cu leadframe," Appl. Phys. Lett. 71, 61-63 (1997).
  28. G. Z. Pan, Ann A. Liu, H, K, Kim, K. N. Tu, and P. A. Totta, "Microstructure of phased-in Cr-Cu/Cu/Au bump-limiting-metallization and its soldering behavior with high Pb and eutectic SnPb solders," Appl. Phys. Lett., 71, 2946-2948 (1997).
  29. C. Y. Liu, and K. N. Tu, "Morphology of wetting reactions of SnPb alloys on Cu as a function of alloy composition," J. Materials Research, 13, 37-44 (1998).
  30. P. G. Kim and K. N. Tu, "Fast dissolution and soldering reactions on Au foils," Materials Chemistry & Physics, 53/2, 165-171 (1998)
  31. D. W. Zheng, Weijia Wen, and K. N. Tu, "Reactive wetting and dewetting induced diffusion-limited aggregation," Phys. Rev. E57, R3719-R3722 (1998).
  32. D. W. Zheng, Z. Y. Jia, C. Y. Liu, Weijia Wen, and K. N. Tu, "Size dependent dewetting and sideband reaction of eutectic SnPb on Au/Cu/Cr thin film," J. Materials Research 13, 1103-1106 (1998).
  33. P. G. Kim, K. N. Tu, and D. C. Abbott, "Time and temperature dependent wetting behavior of eutectic SnPb on Cu lead-frame plated with Pd/Ni and Au/Pd/Ni thin films," J. Appl. Phys. 84, 770-775 (1998).
  34. C. Y. Liu, and K. N. Tu, "Reactive flow of molten Pb(Sn) alloys in Si grooves coated with Cu film," Phys. Rev. E58, 6308-6311 (1998).
  35. D. W. Zheng, Weijia Wen, K. N. Tu, and P. A. Totta, "In-situ scanning electron microscopy study of eutectic SnPb and pure Sn wetting on Au/Cu/Cr multi-layered thin films, " J. Materials Research, 14, 745-749 (1999).
  36. C. Y. Liu, Chih Chen, K. Mal, and K. N. Tu, "Direct correlation of mechanical failure and metallurgical reaction in flip chip solder joints," J. Appl. Phys. 85, 3882-3886 (1999).
  37. J. W. Jang, P. G. Kim, K. N. Tu, D. Frear, and P. Thompson, "Solder reaction-assisted crystallization of electroless Ni (P) under-bump metallization in low cost flip chip technology," J. Appl. Phys. 85, 8456-8463 (1999).
  38. P. G. Kim, J. W. Jang, K. N. Tu, and D. Frear, "Kinetic analysis of interfacial penetration accompanied by intermetallic compound formation," J. Appl. Phys. 86, 1266-1272 (1999).
  39. C. Y. Liu, Chih Chen, C. N. Liao, and K. N. Tu, "Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes," Appl. Phys. Lett., 75, 58-60, 1999.
  40. J. W. Jang, P. G. Kim, K. N. Tu, and M. Lee, "High temperature Pb-free SnSb solders: wetting and interfacial reactions on Cu foils and phased-in Cu-Cr thin films", J. Materials Research , 14, 3895-3900 (1999).
  41. A. S. Zuruzi, C. H. Chiu, W. T. Chen, S. K. Lahiri, and K. N. Tu, "Interdiffusion of high Sn and high lead (PbSn) solders in low temperature flip chip joints during reflow," Appl. Phys. Lett. 75, 3635-3637 (1999).
  42. A. S. Zuruzi, C. H. Chiu, S. K. Lahiri, and K. N. Tu, "Roughness evolution of Cu6Sn5 intermetallic during soldering and its effect on wettability," J. Appl. Phys. 86, 4916-4921 (1999).
  43. P. G. Kim, J. W. Jang, T. Y. Lee, and K. N. Tu, "Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils," J. Appl. Phys. 86, 6746-6751 (1999).
  44. C. Y. Liu, K. N. Tu, T. T. Sheng, C. H. Tung, D. R. Frear, and P. Elenius, "Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization," J. Appl. Phys. 87, 750-754 (2000).
  45. J. W. Jang, C. Y. Liu, P. G. Kim, K. N. Tu, A.K. Mal, and D. R. Frear, "Interfacial morphology and shear deformation of slip chip solder joints,' J. Mater. Res. 15, 1679-1687 (2000).
  46. C. Y. Liu, Chih Chen, and K. N. Tu, "Electromigraiton of thin strips of SnPb solder as a function of composition," J. Appl. Phys., 88, 5703-5709 (2000).
  47. J. W. Jang, D. R. Frear, T. Y. Lee, and K. N. Tu, "Morphology of interfacial reaction between Pb-free solders and electroless Ni(P) under-bump-metallization," J. Appl. Phys., 88, 6359-6363 (2000).
  48. T. Y. Lee, K. N. Tu, S. M. Kuo, and D. R. Frear, "Electromigation of eutectic SnPb solder interconnects for flip chip technology," J. Appl. Phys., 89, 3189-3194 (2001).
  49. Q. T. Huynh, C. Y. Liu, Chih Chen, and K. N. Tu, "Electromigration in eutectic PbSn solder lines," J. Appl. Phys., 89, 4332-4335 (2001).
  50. K. N. Tu, T. Y. Lee, J. W. Jang, L. Li, D. R. Frear, K. Zeng, and J. K. Kivilahti, "Wetting reaction vs. solid state aging of eutectic SnPb on Cu," J. Appl. Phys. 89, 4843-4849 (2001).
  51. K. N. Tu, Fiona Ku, and T. Y. Lee, "Morphological stability of solder reaction products in flip chip technology," J. Electronic Materials, 30, 1129-1132 (2001).
  52. T. Y. Lee, W. J. Choi, K. N. Tu, J. W. Jang, S. M. Kuo, J. K. Lin, D. R. Frear, K. Zeng, and J. K. Kivilahti, "Morphology, kinetics, and thermodynamics of solid state aging of eutectic SnPb and Pb-free solders (SnAg, SnAgCu, and SnCu) on Cu," J. Materials Research. , 17, 291-301 (2002).
  53. M. Li, F. Zhang, W. T. Chen, K. Zeng, K. N. Tu, H. Balkan, and P. Elenius, "Interfacial microstructure evolution between eutectic SnAgCu solder and Al/Ni(V)/Cu thin films," J. Mater. Res., 17, 1612-1621 (2002).
  54. G. T. T. Sheng, C. F. Hu, W. J. Choi, K. N. Tu, Y. Y. Bong, and Luu Nguyen, " Tin whiskers studied by focused ion beam imaging and transmission electron microscopy," J. Appl. Phys., 92, 64-69 (2002).
  55. E. C. C. Yeh, W. J. Choi and K. N. Tu, P. Elenius, and Haluk Balkan, "Current crowding induced electromigation failure in flip chip technology," App. Phys. Lett. 80, 580-582 (2002).
  56. H. Gan, W. J. Choi, G. Xu, and K. N. Tu, "Electromigration in flip chip solder joints and solder lines," JOM, 6, 34-37 (2002).

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b.Silicide Formation

  1. C.J. Kircher, J.W. Mayer, K.N. Tu and J.F Ziegler, " Analysis of Formation of Hafinium Silicide on Silicon," Appl. Phys. Letters 22, 81 (1973).
  2. J.F. Ziegler, J.W. Mayer, C.J. Kircher, and K.N. Tu, "Kinetics of Formation of Hafinium Silicides," J. Appl. Phys. 44, 3851 (1973).
  3. K.N. Tu, J.F. Ziegler, and C.J. Kircher, "Formation of Vanadium Silicides by the Interaction of V with Bare and Oxidized Si Wafers," Appl. Phys. Letters 23, 493 (1973).
  4. S.S. Lau, W.K. Chu, J.W. Mayer and K.N. Tu, "Evaluation of Glancing Angle X-ray Diffraction and MeV IIe Backscattering Analysis of Silicide Formations," Thin Solid Films, 23, 205 (1974).
  5. W.K. Chu, H. Krautle, J.W. Mayer, H. Muller, M-A. Nicolet and K.N. Tu, "Identification of the Domination Diffusing Species in Silicide Formation," Appl. Phys. Lett. 25, 454 (1974).
  6. J. W. Mayer, J. M. Poate, and K. N. Tu, "Thin film and solid-phase reactions," Science, vol. 180, No. 4211, 228-234 (1975).
  7. W.K. Chu, S.S. Lau, J.W. Mayer, H. Muller, K.N. Tu, "Implanted Noble Gas Atoms as Diffusion Markers in Silicide Formation," Thin Solid Films, 25, 393 (1975).
  8. K.N. Tu, W.K. Chu, and J.W. Mayer, "Structure and Growth Kinetics of Ni2Si on Si," Thin Solid Films 25, 403 (1975).
  9. K.N. Tu, "Selective Growth of Metal-Rich Silicide of Near Noble Metals," Appl. Phys. Letts. 27, 221 (1975).
  10. J. M. Poate, W.L. Brown, R. Homer, W.H. Augustyniak, J.W. Mayer, K.N. Tu, and W.F. van der Weg, "The Sputtering of PtSi and NiSi," Nuclear Instruments and Methods 132, 345 (1976).
  11. K.N. Tu, "Analysis of Marker Motion in Thin-Film Silicide Formation," J. of Appl. Phys. 48, 3370 (1977).
  12. U. Köster, K.N. Tu and P.S. Ho, "Effect of Substrate Temperature on Thin Film Silicide," Appl. Phys. Lett. 31, 634 (1976).
  13. S.S Lau, J.W. Mayer and K.N. Tu, "Interaction in the Co/Si Thin Film System - I. Kinetics," J. of Appl. Phys. 49, 4005 (1978).
  14. U. Koster, D. R. Campbell and K.N. Tu, "Contract Reactions Between Amorphous Silicon and Single Crystal Metallic Films," Thin Solid Films 3, 129 (1978).
  15. J.W. Mayer, S. S. Lau and K.N. Tu, "Silicide Formation With Pd-V Alloys and Bilayers," J. Appl. Phys. 50, 5855 (1979).
  16. J.O. Olowolafe, K.N. Tu and J. Angilello, "Contract Reaction Between Si and Pd-W Alloy Films, J. Appl. Phys., 50, 6316 (1979).
  17. I. Ohdomari, K.N. Tu and W. Hammer, "Ion Beam Modification of Silicide-Silicon Interfaces," Radiation Effects, 49, 1 (1980).
  18. K.N. Tu, W.H. Hammer and J.O. Olowolafe, "Shallow Silicide Contact," J. Appl. Phys., 51, 1663 (1980).
  19. G. Ottaviani, K.N. Tu, J.W. Mayer and B.Y. Tsaur, "Phase Separation in Alloy-Si Interaction," Appl. Phys. Letts. 36, 331 (1980).
  20. S. Kritzinger and K.N. Tu, "Shallow Silicide-to-Silicon Contacts: The Case of Amorphous Pd80Si20-to-Silicon," Appl. Phys. Lett. 37, 205 (1980).
  21. S. Kritzinger and K.N. Tu, "Thin Palladium-Silicide Contacts to Silicon," J. Appl. Phys. 52, 305 (1981).
  22. M. Eizenberg, G. Ottaviani and K.N. Tu, "Effect of Substrate Temperature on the Formation of Shallow Silicide Contacts on Si Using Pd-W and Pt-W Alloys," Appl. Phys. Lett. 37, 87, (1980).
  23. M. Eizenberg, H. Foell and K.N. Tu, "Shallow Silicide Contacts Formed by Using Codeposited Pt2Si and Pt1.2Si Films," Appl. Phys. Lett. 37, 548, (1980).
  24. B.Y. Tsaur, J.W. Mayer and K.N. Tu, "Ion-Beam-Induced Metastable Pt2Si3 Phase: I Formation, Structure and Properties," J. Appl. Phys. 51, 5326 (1980).
  25. B.Y. Tsaur, J.W. Mayer, J.F Graczyk and K.N. Tu, "Ion-Beam-Induced Metastable Pt2Si3 Phase: II Kinetics and Morphology," J. Appl. Phys. 51, 5334 (1980).
  26. J.F Graczyk, K.N. Tu, B.Y. Tsaur and J.W. Mayer, "Ion-Beam-Induced Metastable Pt2Si3 Phase: III Structure and Diffusion in Amorphous Pt40Si60Alloys," J. Appl. Phys. 53, 6772 (1982).
  27. K.N. Tu, "Thermal Stability of Pt2Si and PtSi in Thin Film and in Bulk Diffusion Couples," J. Appl. Phys. 53, 428 (1982).
  28. H. Foell, P.S. Ho and K.N. Tu, "Cross-Sectional TEM of Silicon-Silicide Interfaces," J. Appl. Phys. 52, 250 (1981).
  29. R.D. Thompson, B.Y. Tsaur and K.N. Tu, "Contact Reaction Between Si and Rare Earth Metals," Appl. Phys. Letts. 38, 535 (1981).
  30. I. Ohdomari, K.N. Tu, K. Suguro, M. Akiyama, I. Kimura and K. Yoneda, "Low Temperature Redistribution of As in Si During Pd2Si Formation," Appl. Phys. Lett. 38, 1015 (1981).
  31. M.G. Grimaldi, L. Wielunski, M-A. Nicolet and K.N. Tu, "Germanide Formation by Thermal Treatment of Pt Films Deposited on <100> Single Crystal Ge," Thin Solid Films, 81, 207 (1981).
  32. H. Foell, P.S. Ho and K.N. Tu, "Transmission Electron Microscopy of the Formation of Nickel Silicides," Phil. Mag. A45, 32 (1982).
  33. M. Eizenberg and K.N. Tu, " A Comparison of Formation of Shallow Silicide Contacts, Pd-W and Pt-W Alloys vs Pd-Si and Pt-Si Alloys," J. Appl. Phys. 53, 1577 (1982).
  34. K.N. Tu, K.Y. Ahn and S.R. Herd, "Silicide Films for Archival Optical Storage" Appl. Phys. Lett. 39, 927 (1981).
  35. K.N. Tu, "Shallow and Parallel Silicide Contacts," J. Vac. Sci. Tech. 19, 766 (1981).
  36. S. Babcock and K.N. Tu, "Titanium-Tungsten Contacts to Si: The Effects of Alloying on Schottky Contact and on Silicide Formation," J. Appl. Phys. 53, 6898 (1982).
  37. I. Ohdomari, K. Suguro, M. Akiyama, T. Maeda, K.N. Tu, I. Kumura and K. Yoneda, "Low Temperature Doping of As Atoms in Si During Pd2Si Formation," Thin Solid Films, 89, 349 (1982).
  38. L.J. Chen, J.W. Mayer, K.N. Tu and T.T. Sheng, "Lattice Imaging of Silicide-Silicon Interfaces," Thin Solid Films, 93, 91 (1982).
  39. R.D Thompson and K.N. Tu, "Comparison of the Three Classes: Rare Earth, Refractory and Near Noble Silicide Contacts," Thin Solid Films 53, 4372 (1982).
  40. K.Y. Ahn, T.H. DiStefano, N.J. Mazzeo, S.R. Herd and K.N. Tu, "Laser Writing on Metal-Silicon Bilayers for Optical Storage - I Optical Properties," J. Appl. Phys. 53, 3777 (1982).
  41. S.R. Herd, K.N. Tu, K.Y. Ahn, T.II. DiStefano and N.J. Mazzeo, "Laser Writing on Silicon-Metal Bilayers for Optical Storage - II. Microscopic Study," J. Appl. Phys. 53, 4372 (1982).
  42. M. Eizenberg and K.N. Tu, "A Study of Vanadium as Diffusion Barrier Between Aluminum and Gadolinium Silicide Contacts," J. Appl. Phys. 53, 6891(1982).
  43. M. Wittmer, C.Y. Ting, I. Ohdomari and K.N. Tu, "Redistribution of As During Pd2Si Formation: I. Ion Channeling Measurements," J. Appl. Phys. 53, 6781 (1982).
  44. M. Wittmer and K.N. Tu, "On the Growth Kinetics and Diffusion Mechanism in Pd2Si," Phy. Rev. B., 27 1173 (1983).
  45. G. Ottaviani, K.N. Tu, W.K. Chu, L.S. Hung, and J.W. Mayer, "NiSi Formation at the Silicide/Si Interfaces on the NiPt/Si System," J. Appl. Phys. 53, 4903 (1982).
  46. K.N. Tu, B. Ottaviani, U. Gosele and H. Foell, " Intermetallic Compound Formation in Thin Film and in Bulk Samples of the Ni-Si Binary System," J. Appl. Phys. 54, 748 (1983).
  47. A. Cros, R.A. Pollak and K.N. Tu, "Interaction Between Chromium Oxide and Chrominum Silicide," J. Appl. Phys., 54, 258 (1983).
  48. L.J. Chen, J.W. Mayer and K.N. Tu, "Formation and Structure of Epitaxial Silicides on Silicon," Thin Solid Films, 93, 135 (1982).
  49. K.N. Tu, G. Ottaviani, R.D. Thompson and J.W. Mayer, "Thermal Stability and Growth Kinetics of Co2Si and CoSi in Thin Film Reactions," J. Appl. Phys. 53, 4406 (1982).
  50. K.Y. Ahn, T.H. DiStefano, S.R. IIerd, N.J. Mazzeo and K.N. Tu, "High Sensitivity Silicide Films for Optical Recording," J. Appl. Phys. 53, 6360 (1982).
  51. O. Bisi and K.N. Tu, "Atomic Intermixing and Electronic Interaction at the Pd-Si(III) Interface," Phys. Rev. Lett. 52, 1633 (1984).
  52. M. Wittmer, C.Y. Ting and K.N. Tu, "Redistribution of As During Pd2Si Formation II. Electrical Measurements," J. Appl. Phys. 54, 699 (1983).
  53. S.E. Babcock and K.N. Tu, "Titanium-Tungsten Contacts to Si: II. Its Stability Against Aluminum Penetration," J. Appl. Phys. 59, 1599-1605 (1986).
  54. G. Ottaviani, K.N. Tu, R.D. Thompson, J.W. Mayer, and S.S. Lau, "Interaction of Pd-Er Alloys with Silicon," J. Appl. Phys. 54, 4614 (1983).
  55. I. Ohdomari, M. Akiyama, T. Maeda, M. Hori, C. Takebayashi, A. Ogura, I. Kimura, K. Yoneda and K.N. Tu, "Low Temperature Redistribution of As in Si During Ni Silicide Formation," J. Appl. Phys. 56, 2725 (1984).
  56. S. Herd, K.N. Tu and K.Y. Ahn, "Formation of an Amorphous Rh-Si Alloy by Interfacial Reaction Between Amorphous Si and Crystalline Rh Thin Films," Appl. Phys. Letts. 42, 597 (1983).
  57. M. Wittmer and K.N. Tu, "Low Temperature Diffusion of Dopant Atoms in Si During Silicide Formation," Phys. Rev. B29, 2010 (1984).
  58. A. Cros, R.A. Pollak and K.N. Tu, "Oxidation Behavior of Pd-Si Compounds" Thin Solid Films 104, 221 (1983).
  59. S.R. Herd, K.Y. Ahn and K.N. Tu, " Formation and Crystallization of Amorphous Silicides at the Interface Between Thin Metal and Amorphous Silicon Films," Thin Solid Films, 104, 197 (1983).
  60. M. Wittmer, C.Y. Ting and K.N. Tu, " Atomic Motion of Dopancy During Interfacial Silicide Formation," Thin Solid Films, 104, 191 (1983).
  61. P.A. Psaras, R.D. Thompson, S.R. Herd and K.N. Tu, "Structure and Growth Kinetics of RhSi on Single Crystal, Polycrystalline and Amorphous Silicon Substrates," J. Appl. Phys. 55, 3536 (1984).
  62. A. Cros, R.A. Pollak and K.N. Tu, "Room Temperature Oxidation on Ni, Pd and Pt Silicides," J. Appl. Phys. 57, 2253-2257 (1985).
  63. M. Eizenberg, K.N. Tu, C.J. Palmstrom and J.W. Mayer, "Two-Step Al/Ti Metallization to PtSi/Si Structures," Appl. Phys. Lett. 45, 905-907 (1984).
  64. P.A. Psaras, M. Eizenberg and K.N. Tu, "Sequential Silicide Formation Between V and Amorphous Si Thin Films Bilayers," J. Appl. Phys. 56, 3439 (1984).
  65. F. Nava, P.A. Psaras, H. Takai and K.N. Tu, "Phase Transformations in Alloy and Bilayer Thin Films of Vanadium and Silicon," J. Appl. Phys. 59, 2429-2438 (1986).
  66. H. Takai, P.A. Psaras and K.N. Tu, "Effect of Substrate Crystallinity and Dopancy on the Growth Kinetics of Pt Silicides," J. Appl. Phys. 58, 4165 (1985).
  67. P.A. Psaras, R.D. Thompson and K.N. Tu, "Effect of Dopant on Reaction Between Polycrystalline Si and Thin Film Rh," Appl. Phys. Lett. 47, 250-252 (1985).
  68. R.D. Thompson, K.N. Tu and G. Ottaviani, "Phase Transformation of Alloys on a Reactive Substrate: Interaction of Binary Alloys of Transition and Rare Earth Metals with Silicon," J. Appl. Phys., 58, 705-710 (1985).
  69. 68. M. Eizenberg, R.D. Thompson and K.N. Tu, "Thermal Stability of A1/PdW/Si Contact Systems," J. Appl. Phys., 58, 1886-1892 (1985).
  70. H.R.G. Hentzell, P.A. Psaras and K.N. Tu, " Interfacial Reaction Between Amorphous Silicon and Palladium Thin Films," Materials Letters, 3, 225-260 (1985).
  71. K.N. Tu, "Contacts for Shallow Junctions," Thin Solid Films, 140, 71-78 (1986).
  72. S. Valeri, U. del pennino, G. Ottaviani, P. Sassaroli and K.N. Tu, "AES and EELS Study of ErSi2 and its Behavior under Ion Bombardment and Oxygen Exposure," Solid State Communication 60, 569-573 (1986).
  73. B.Z. Weiss, K.N. Tu and D.A. Smith, "Application of Direct and Indirect Methods to the Study of Crystallization of Amorphous Cr5Si3," Scripta Met. 21, 1055 -1060 (1987).
  74. R.D. Thompson, H. Takai, P.A. Psaras and K.N. Tu, "The Effect of Substrate on Phase Transformation of Amorphous Ti-Si Ally," J. Appl. Phys. 61, 540-544 (1987).
  75. R.C. Cammarata, C.V. Thompson, and K.N. Tu, "NiSi2 Precipitation in Ni implanted Si Films", Appl. Phys. Lett. 51, 1106-1108 (1987).
  76. A. Cros and K.N. Tu, "Stability of Oxides Grown on Ta Silicide Surfaces," J. Appl. Phys. 60, 3323-3326 (1986).
  77. C.B. Boothroyd, W.M. Stobbs and K.N. Tu, "The Formation of Submicron Epitaxial Islands of Pd2Si on Silicon," Appl. Phys. Lett. 50, 577-579, (1987).
  78. B.Z. Weiss, K.N. Tu and D.A. Smith, "Amorphous Cr5Si3 Films-Morphology and Kinetics of Crystallization", Metallurgical Transactions A, 19A, 1991-2003 (1988).
  79. K.N. Tu, D.A. Smith and B.Z. Weiss, "hyperbolic Grain Boundaries" Phys. Rev. B (Rapid Communication), 36 8948-8950 (1987).
  80. A. Cros, K.N. Tu, D.A. Smith and B.Z. Weiss, "Low Temperature Amorphous-to-Crystalline Transformations of CoSi2 Films," Appl. Phys. Letts. 52, 1311-1313 (1988).
  81. D.A. Simth, K.N. Tu, and B.Z. Weiss, "In-situ studies of the crystallization of amorphous CoSi2 films", Ultramicroscopy 30, 90-96 (1989).
  82. J.J. Chu, L.J. Chen, and K.N. Tu "Localized Epitaxial Growth of ReSi2 Silicides on (111) and (100) Si", J. Appl. Phys. 62, 461-465 (1987).
  83. J.J. Chu, L.J. Chen, and K.N. Tu, "Localized Expitaxial Growth of IrSi3 on (111) and (100) Si", J. Appl. Phys. 63, 1163-1167 (1988).
  84. L.A. Clevenger, C.V. Thompson, R.C. Cammarata and K.N. Tu, "Reaction Kinetics of Ni/Si multilayer films" Appl. Phys. Lett. 52, 795-797 (1988).
  85. T.C. Chou, C.Y Wong and K.N. Tu, "Enhanced Grain Growth in P-doped Poly-Si by Ti Silicide Formation," Appl. Phys. Lett. 49, 1381-1383 (1986).
  86. T.C. Chou, C.Y. Wong and K.N. Tu, "Lattice Imaging of Metastable TiSi2", J. Appl. Phys. 62, 2275-2279 (1987).
  87. H. Takai and K. N. Tu, "Dopant Effect on intrinsic diffusivities in nickel silicide", Phys. Rev. B38, 8121-8130 (1988).
  88. R.D. Thompson, K.N. Tu, S.S. Iyer, S. Delage, and J. Angillelo, "Interfacial Reaction between Ni and MBE Grown SiGe Alloy," J. of Electrochem. Soc. 135, 3161-3163 (1988).
  89. K.H. Robrock, K.N. Tu, D.W. Abraham and J.L. Clabes, "A study of planarization of cobalt silicide lines and silicon surfaces by atomic force microscopy and scanning electron microscopy", Appl. Phys. Lett. 54, 1543-1545 (1989).
  90. R. D. Thompson, J. Angilello, and K. N. Tu, "In-situ x-ray diffraction and resistivity measurements of crystallization of amorphous NiSix alloy films," Thin Solid Films 188, 259-265 (1990).
  91. L. H. Allen, J. W. Mayer, K. N. Tu and L. C. Feldman, "Kinetic study of Si recrystallization in the reaction between Au and poly-Si films," Phys. Rev. B, 41, 8213-8220 (1990).
  92. L. A. Clevenger, C. V. Thompson, and K. N. Tu, "Explosive silicidation in nickel/amorphous-silicon multilayer thin films," J. Appl. Phys., 67, 2894-2898 (1990).
  93. R. R. De Avillez, L. A. Clevenger, C. V. Thompson, and K. N. Tu, "Quantitative investigation of Ti/amorphous-Si multilayer thin film reactions," J. Materials Research, 5, 593-600 (1990).
  94. R. C. Cammarata, C. V. Thompson, C. Hayzelden and K. N. Tu, "Silicide precipitation and silicon crystallization in Ni implanted amorphous Si thin films," J. Materials Research, 5 2133-2138 (1990).
  95. K. N. Tu, "Effect of surface and interface energies on constructing 3-D silicon silicide structures," IBM J. of Res. & Devel., 34, 868-874 (1991).
  96. K. N. Tu, "Irreversible processes of spontaneous whisker growth in bimetallic Cu-Sn thin film reactions" Phys. Rev. B 49, 2030-2034 (1994).
  97. S.R. Herd, I.M. Fisher, G.U. Singco, R.D. Thompson and K.N. Tu, "Solid phase amorphization and crystallization in multilayer and bilayer Rh-Si thin film," Materials Chemistry and Physics 34, 274-284 (1993).
  98. K.M. Liang, L.J. Chen, A. Markov, K.N. Tu, G.U. Singco, L.T. Shi, and C. Farrell, "Crystallization of amorphous CoSi2 thin films: (1) Kinetics of nucleation and Growth," Materials Chemistry and Physics 38, 250-257 (1994).
  99. F. G. Si and K. N. Tu, "Entropic origin of the free energy in nucleation of crystallites in amorphous CoSi2 thin films," Phys. Rev. Lett., 74, 4476-4478 (1995).
  100. C. C. Lin, W.S. Chen, H. L. Hwang, K. Y. J. Hsu, H. K. Liou and K. N. Tu, "Reliability study of submicron Ti silicide contacts," Appl. Surface Science, 92, 660-664 (1996).

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c.Electrical Properties and Schottky Barrier of Silicides

  1. I. Ohdomari, K.N. Tu, F. M. d'Heurle, T. S. Kuan and S. Petersson, "Schottky Barrier Height of Iridium Silicide," Appl. Phys. Lett., 33, 1028 (1978).
  2. I. Ohdomari, T.S. Kuan and K.N. Tu, "Microstructure and Schottky Barrier Height of Iridium Silicide Formed on Silicon," J. Appl. Phys. 50, 7020 (1979).
  3. G. Ottaviani, K.N. Tu and J.W. Mayer, "Interfacial Reaction and Schottky Barrier in Metal-Silicon Systems" Phys. Rev. Lett. 44, 284 (1980).
  4. I. Ohdomari and K.N. Tu, "Parallel Silicide Contacts" J. Appl. Phys. 51, 3735, 205 (1980).
  5. M. Eizenberg, H. Foell and K.N. Tu, "Formation of Shallow Schottky Contacts to Si Using Pt-Si and Pd-Si Alloy Films," J. Appl. Phys. 52, 861 (1981).
  6. K.N. Tu, R.D. Thompson and B.Y. Tsaur, "Low Schottky Barrier of Rare Earth Silicides on n-Si," Appl. Phys. Letts., 38, 626 (1981).
  7. R.D. Thompson, M. Eizenberg and K.N. Tu, "Schottky Contacts of Gd-Pt and Gd-V Alloys on n-Si and p-Si," J. Appl. Phys., 52, 6763 (1981).
  8. G. Ottaviani, K.N. Tu and J.W. Mayer, "Barrier Heights and Silicide Formation For Ni, Pd, and Pt on Silicon," Phys. Rev. B, 24. 3354 (1981).
  9. M. Eizenberg and K.N. Tu, "Formation and Schottky Behavior of Manganese Silicides on n-type Silicon," J. Appl. Phys. 53, 6885 (1982).
  10. R.D. Thompson and K.N. Tu, "Schottky Barrier of Non-Uniform Contacts to n-type and p-type Silicon," J. Appl. Phys. 53, 4285 (1982).
  11. T. Okumura and K.N. Tu, "Analysis of Parallel Schottky Contacts by Differential Internal Photoemission Spectroscopy," J. Appl. Phys. 54, 922 (1983).
  12. C. Fontaine, T. Okumura and K.N. Tu, "Interfacial Reaction and Schottky Barrier Between Pt and GaAs," J. Appl. Phys. 54, 1404 (1983).
  13. T. Tien, G. Ottaviani and K.N. Tu, "Temperature Dependence of Electrical and Structural Behaviors of Ta-Si Thin Alloy Films," J. Appl. Phys. 54, 7047 (1983).
  14. I. Ohdomari, M. Hori, T. Maeda, A. Ogura, H. Kawarada, T. Hamamoto, K. Sano, K.N. Tu, M. Wittmer, I. Kimura and K. Yoneda, "Reduction of Contact Resistivity by As Redistribution During Pd2Si Formation," J. Appl. Phys. 54, 4679 (1983).
  15. O. Bisi, L.W. Chiao and K.N. Tu, "Electronic Structure and Properties of Ni-Si (001) and Ni-Si (111) Reactive Interfaces," Phys. Rev. B 4664-4674 (1984).
  16. O. Bisi, L.W. Chiao and K.N. Tu, "Electronic Structure and Properties of Silicon-Transition Metals Interfaces," Surface Science, 152/153 1185-1190 (1985).
  17. F. Nava, T. Tien and K.N. Tu, "Temperature Dependence of Semiconducting and Structural Properties of Cr-Si Thin Films," J. Appl. Phys. 57, 2018-2025 (1985).
  18. F. Nava, O. Bisi and K.N. Tu, "Electrical Transport Properties of VSi2, V5Si3 and V3 Si Thin Compound Films," Phys. Rev. B, 34, 6143-6150 (1986).
  19. T. Okumura and K.N. Tu, "W-Pt Alloy Contacts on n-type GaAs," Appl. Phys. Lett., 47, 42-44 (1985).
  20. M. Wittmer, P. Oelhafen and K.N. Tu, "Electronic Structure of Ir Silicides," Phys. Rev. B, 33, 5390-5400 (1986).
  21. B.Z. Weiss, K.N. Tu and D.A. Smith, "Temperature Dependence of Electrical and Structural Properties of IrSi Thin Films," J. Appl. Phys. 59, 415 (1986).
  22. F. Nava, O. Bisi, P. Psaeas, H. Takai, and K.N. Tu, "Electrical Characterization of Thin Alloy Films of VSi2 andV3Si," Thin Solid Films, 140, 167 (1986).
  23. M.O. Aboelfotoh and K.N. Tu, "Schottky Behavior of Ti-W Alloy on Silicon," Phys. Rev. B 33, 6572-6578 (1986).
  24. F. Nava, P.A. Psarar, H. Takai, K.N. Tu and O. Bisi, "Structural and Electrical Properties of Amorphous NbSi Films," J. of Materials Research 1, 327-336 (1986).
  25. B.Z. Weiss, K.N. Tu and D.A. Smith, "Cy75Si25 Thin Films - Temperature Dependence of Electrical Properties and Microstructures," Acta. Met. 34, 1491-1504 (1986).
  26. F. Nava, B.Z. Weiss, K.N. Tu, D.A. Smith and P.A. Psaras, "Electrical and Structural Properties of V3Si Thin Films," J. Appl. Phys. 60, 2445-2452 (1986).
  27. M.O. Aboelfotoh and K.N. Tu, "Schottky Barrier Heights of Ti and TiSi2 on n-type and p-type Si," Phys. Rev. B, 34, 2311-2318 (1986).
  28. F. Nava, K.N. Tu, E. Mazzega, M. Michelini and G. Queirolo, "Electrical Transport Properties of Transition Metal Disilicide Films," J. Appl. Phys. 61, 1085-1093 (1987).
  29. T. Okumura and K.N. Tu, "Electrical Characterization of Schottky contacts of Al, Au, Gd and Pt on n-type and p-type GaAs," J. Appl. Phys. 61, 2955-2961 (1987).
  30. M. Wittmer, P. Oelhafen and K.N. Tu, "Schottky Barrier Formation at Ir/Si Interfaces," Phys. Rev. B, 35, 9073-9084 (1987).
  31. G. Ottaviani, K.N. Tu, P. Psaras and C. Nobili, "In Situ Resistivity Measurement of Cobalt Silicide Formation," J. Appl. Phys. 62, 2290-2294 (1987).
  32. F. Nava, B.Z. Weiss, K.Y. Ahn, D.A. Smith, K.N. Tu, "Thermal Stability and Electrical Conduction Behavior of Co-evaporated WSi2±x Thin Films," J. Appl. Phys. 64, 354-364 (1988).
  33. D.A. Smith, K.N. Tu and B.Z. Weiss, "Crystallization, Resistivity and Microstructure of Co Deposited Metal Silicon Thin Film Alloys," Ultramicroscopy 23 405-410 (1987).
  34. M.O. Aboelfotoh, A. Cros, B. G. Svensson, and K.N. Tu, "Schottky-barrier behavior of copper and copper-silicide on n-type and p-type silicon," Phys. Rev. B, 41, 9819-9827 (1990).
  35. A. Cros, M.O. Aboelfotoh, K.N. Tu, "Formation, oxidation, electronic and electrical properties of copper silicide," J. Appl. Phys., 67, 3328-3336 (1990).
  36. H. K. Liou, X. Wu, U. Gennser, V. P. Kesan, S. S. Iyer, K.N. Tu, and E. S. Yang, "Interfacial reactions and Schottky barrier of Pt and Pd on epitaxial SiGe alloy films," Appl. Phys. Lett., 60, 577-579 (1992).
  37. H. K. Liou, E. S. Yang and K. N. Tu, "Nonalloyed ohmic contacts to n-Si using a strained SiGe buffer layer," Appl. Phys. Lett., 63, 911-913 (1993).
  38. M.O. Aboelfotoh, K. N. Tu, F. Nava, and M. Michelini, " On the remarkly low resistivity of Cu3Ge thin films," J. Appl. Phys. 75, 1616-1619 (1994).
  39. C. N. Liao and K. N. Tu, "Direct measurement of contact temperature using Seebeck potential," J. Appl. Phys., 92, 635-637 (2002).

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d. Diffusion and Reactions in Metallic Thin Films

  1. K.N. Tu, "Mass Transport Along Grain Boundaries of Silver," J. of Applied Phys. 43, 1303 (1972).
  2. K.N. Tu and R. Rosenberg, "Mass Transport in Layered Polycrystalline Thin Films," Thin Solid Films, 13, 163 (1972).
  3. K.N. Tu and B.S. Berry, "X-Ray Study of Interdiffusion in Cu-Au Bimetallic Thin Films," J. Appl. Phys. 43, 3283 (1972).
  4. J.W. Mayer and K.N. Tu, "Analysis of Thin-Film Structures with Nuclear Back-scattering and X-ray Diffraction," J. Vac. Sci. Tech. 11, 86 (1974). (Based on an invited talk).
  5. D. Gupta, K.N. Tu and K.W. Asai, "Diffusion of A110 Tracer in Amorphous Pd81Si19 Alloy," Phys. Rev. Letters 35, 796 (1975).
  6. J.W. Mayer, J.M. Poate and K.N. Tu and R.E. Robinson, "Interdiffusion in a Bulk Couple of Pb-PbIn Alloy," Acta Mct. 24, 609 (1976).
  7. J.A. Cairns, C.W. Keep, R.J. Waite, J.F. Ziegler and K.N. Tu, "A Controlled-Atmosphere Electron-icroscopy Study of the Influence of Oxygen on the Inter-diffusion of Gold and Iron," Appl. Phys. Lett. 30, 392 (1977).
  8. H.H. Andersen, K.N.Tu and J.F. Ziegler, "Polycrystalline Film Target Texture and Nuclear Backscattering Analysis," Nuclear Instruments and Methods, 149, 247 (1978).
  9. M. Murakami and K.N. Tu "Diffusion in Thin Film Studied by X-ray Diffraction Techniques," Bulletin of Japan Institute of Metals, 18, 262 (1979) An invited review paper written in Japanese.
  10. K.N. Tu, "Low Temperature Ordering in Fine-Grained and Disordered Cu3Au Thin Films," Scripta Met. 14, 603, (1980).
  11. J.M. Poate and K.N. Tu, "Thin Film and Interfacial Analysis," an invited paper to Physics Today, May (1980), p.34.
  12. D. Gupta, K.N. Tu and K.W. Asai, "Tracer Diffusion in Amorphous Pd80Si20 and Gd16Co84 Films," Thin Solid Films, 90, 131 (1982).
  13. U. Gosele and K.N. Tu, "Growth Kinetics of Planar Binary Diffusion couples: Thin Film Case versus Bulk Cases," J.Appl. Phys. 53, 3252 (1982).
  14. U. Gosele, K.N. Tu and R.D. Thompson, "An Analysis of Inert Marker Motion in a Single Compound Layer for Solid Phase Epitaxy and Thin Film Diffusion couples,' J. Appl. Phys., 53, 8759 (1982).
  15. H.T.G. Hentzell, R.D. Thompson and K.N. Tu, "Interdiffusion in Copper-Aluminum Thin Film Bilayers: I. Structure and Kinetic of Sequential Compound Formation," J.Appl. Phys. 54, 6923 (1983).
  16. H.T.G. Hentzell and K.N. Tu, "Interdiffusion in Copper-Aluminum Thin Film Bilayers: II Analysis of Marker Motion During Sequential Compound Formation," J.Appl. Phys. 54, 6929 (1983).
  17. H.T.G. Hentzell, R.D. Thompson and K.N. Tu, "Motion of W Marker During Sequential Compound Formation in Bimetallic Al-Cu Thin Films," Materials Letters, 2, 81 (1983).
  18. J. Tardy and K.N. Tu, "Solute Effect on Interdiffusion in Al3 Ti Thin Film Compound," Phys. Rev. B, 32, 2070-2081 (1985).
  19. S. Newcomb and K.N. Tu, "TEM Study of Formation of Amorphous NiZr Alloy by Solid State Reaction," Appl. Phys. Letts. 48, 1436-1438 (1986).
  20. J.E.E. Baglin, A.G. Schrott, R.D. Thompson, K.N. Tu and A. Segmiller, "Ion Induced Adhesion via Interfacial Compounds" Nuclear Instruments and Methods B 19/20, 782-786 (1987).
  21. G.V. Chandrashekhar, D. Gupta, S. Newcomb, F.M.H. Spit and K.N. Tu, "A comparison between amorphous NiZr alloys formed by solid state reaction and co-deposition", Thin Solid Film, 164, 199-05 (1988).
  22. K.N. Tu, G.V. Chandrashekhar and T.C. Chou, "Amorphous Alloy Formation by Solid State Reaction", Thin Solid Films 163/1, 43-48 (1988).
  23. T.C. Chou and K.N. Tu, "Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films", J. Appl. Phys. 64, 2375-2379 (1988).
  24. K. N. Tu and T.C. Chou, "Submicron Void Formation in Amorphous NiZr Alloys", Phys. Rev. Lett. 61, 1863-1866 (1988).
  25. J. Angilello, R.D. Thompson, and K.N. Tu, "High speed x-ray diffraction and in-situ resistivity measurements at temperature of 100K to 1000K," J. of Appl. Crystallography 22, 523-527 (1989).
  26. U. Gosele and K.N. Tu, "Critical thickness of amorphous phase formation in binary diffusion couples," J. Appl. Phys. 66, 2619-2626 (1989).
  27. B. Blanpain, J.W. Mayer, J.C. Liu and K.N. Tu, "Layered growth of the quasicrystalline decagoanl Al3Pd phase Al/Pd lateral diffusion couples," Phys. Rev. Lett. 64, 2671-2674 (1990).
  28. B. Blanpain, J. W. Mayer, J. C. Liu and K. N. Tu, "Kinetic description of the transition from a one phase to a two-phase growth regime in Al/Pd lateral diffusion couples," J. Appl. Phys. 68, 3259-3267 (1990).
  29. E. Ma, C. V. Thompson, L. A. Clevenger, and K. N. Tu, "Self- propagating explosive reaction in Al/Ni multilayer thin films," Appl. Phys. Lett., 57, 1262-1264 (1990).
  30. M. Matsuura, R. Petkie, G. Singco and K. N. Tu, "Solid state amorphization of RE-TM (RE = Ce, ER and TM = Fe, Co) multilayers," Materials Science and Engineering, A133 551-554 (1991).
  31. K. N. Tu, "Metastable phase formation in thin film reactions," Mater. Sci. & Engr. A134, 1244-1247 (1991).
  32. K. P. Rodbell, K.N. Tu, W. A. Lanford and X. S. Guo, "Fine line interactions in Al/Hf/Al thin films," Phys. Rev. B43, 1422-1432, (1991).
  33. K. N. Tu, S. R. Herd and U. Gösele, "Metastability in slow thin film reactions," Phys. Rev. B43, 1198-1201 (1991).
  34. A. J. McGibbon, L. M. Brow, ct al, and K. N. Tu, "Microscopy in Solid State Science," Microscopy Research and Technique, 24, 299-315 (1993).
  35. K. N. Tu, K. P. Rodbell, S. R. Herd, and D. J. Mikalsen, "Stress and phase changes in a low thermal expansion Al-3 at.% Ge alloy film on oxidized Si wafers," Materials Chemistry and Physics, 33, 225-232 (1993).
  36. B. S. Lim, W. C. Pritchet, K. P. Rodbell and K. N. Tu, "Thermal stress of Al and Al-3 at.% Ge thin films on Si wafers," J. Appl Phys., 74, 2945-2947 (1993).
  37. M. L. Chou, S. A. Rishton, K. N. Tu, and H. Chen, "Microstructural changes in confined submicron Al films," J. Appl. Phys., 73, 2575-2577 (1993).
  38. T. Laursen, D. Adams, T. L. Alford, K. N. Tu, F. Deng, R. Morton, and S. S. Lau, "Encapsulation of Ag films in Ag-Ti alloy bilayer structures," Thin Solid Films, 290-291, 411-416 (1996).

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e. Diffusion and Reactions in Si, SiO2 and Low k Materials

  1. K.N. Tu, P. Chaudhari, K. Lal, B.L. Crowder and A.I. Tan, "X-Ray Topographic Determination of the Absence of Lateral Strains in Ion-Implanted Si," J. Appl. Phys. 43, 4262 (1972).
  2. K.N. Tu, S.I. Tan, and B.L. Crowder, "Circular Etch Pit in Ion Implanted Amorphous Silicon Films," Appl. Phys. Letts. 22, 274 (1973).
  3. D.R. Campbell, E.I. Alessandrini, K.N. Tu and J.E. Lewis, "Phosphorous Diffusion and Catalyzed Crystallization in Amorphous Films of SiO2, J. Electrochem. Soc. Amer. 121 1115 (1974).
  4. E.I. Alessandrini, D.R. Campbell and K.N. Tu, "Surface Reaction on MOS Structure," J. Appl. Phys. 45, 4888 (1974).
  5. S. Mader and K.N. Tu, "Microstructure of Xenon Implanted Silicon," J. Vac. Sci. Technol. 12, 501 (1975).
  6. D.R. Campbell, K.N. Tu and R.O. Schwenker, "Diffusion of As Along Dislocation in Si," Thin Solid Films 25, 213 (1975).
  7. L.D. Glowinski, K.N. Tu and P.S. Ilo., "Direct Observation of Defects in Self-Ion Implanted and Post-Annealed Si Wafers," Appl. Phys. Lett. 28, 312 (1976).
  8. E.I. Alessandrini, D.R. Campbell and K.N. Tu, "Interfacial Reaction in MOS Structure," J. Vac. Sci. Tech. 13, 55 (1976).
  9. K.N. Tu and S.H. Libertinim "Wetting of Quartz Surface by Au-Si Eutectic Melt," J. Appl. Phys. 48, 420 (1977).
  10. K.N. Tu and A. Howie, "Forbidden 200 Diffraction Spots in Silicon," Phil Mag. B, 37, 73 (1978).
  11. W.K. Chu and K.N. Tu, "Identification of Diffusion Species in V-SiO2 Reactions," Appl, Phys. Lett. 33, 83 (1978).
  12. R.D. Thompson and K.N. Tu, "Low Temperature Gettering of Cu, Ag and Au Across a Wafer of Si by Al," Appl. Phys. Letts, 41, (1982).
  13. R.D. Thompson, D. Gupta and K.N. Tu, "Low Temperature Diffusion and Solubility of Ni in P-doped Czochralski Grown Si," Phys. Rev. B, 33, 2636-2641 (1986).
  14. A. Cros, A. Schrott, R.D. Thompson and K.N. Tu, "Influence of Sputtering Damage in Chemical Interactions between Cr and SiO2," Appl. Phys. Lett. 48, 1547-1549 (1986).
  15. T.C. Chou, C.Y. Wong and K.N. Tu, "Enhanced Grain Growth of Polycrystalline Silicon at Low Temperature by Dopant Redistribution', J. Appl. Phys. 62, 2722-2726 (1987).
  16. T.C. Chou and K.N. Tu, "Interaction of Poly-Si/ SiO2/Si Substrate under Thermal and Electric Fields", Appl. Phys. Letts. 52, 1317-1319 (1988).
  17. K.N. Tu, J. Tersoff, T.C. Chou and C.Y. Wong, "Chemically Induced Grain Boundary Migration in Doped Poly-Crystalline Si Films", Solid State Communications 66, 93-97 (1988).
  18. F.H.M. Spit, D. Gupta and K.N. Tu, "Diffusivity and solubility of Ni in monocrystalline Si", Phys. Rev. B 39, 1255 - 1260 (1989).
  19. K. N. Tu, "Measurement of interfacial energy between amorphous Si and crystalline Si," Appl. Phys. A53, 32-34 (1991).
  20. G. Z. Pan, K. N. Tu, and S. Prussin, "Size-distribution of end-of-range dislocation loops in Si-implanted Si," Appl. Phys. Lett., 68, 1654-1656 (1996).
  21. Chih Chen, G. Z. Pan, and K. N. Tu, "Preparation of twist-type bicrystals of Si," Materials Chemistry and Physics, 47, 90-92 (1997).
  22. G. Z. Pan, K. N. Tu, and S. Prussin, "Size distribution and annealing behavior of end-of -range dislocation loops in Si-implanted Si," J. Appl. Phys. 81, 78-84 (1997).
  23. G. Z. Pan, K. N. Tu, and S. Prussin, "Microstructural evolution of (113) rodlike defects and (111) dislocation loops in Si-implanted Si," Appl. Phys. Lett., 71, 659- 601 (1997).
  24. G. Z. Pan and K. N. Tu, "Transmission electron microscopy on (113) rodlike defects and (111) dislocation loops in silicon-implanted silicon," J. Appl. Phys. 82, 601-608 (1997).
  25. Chih Chen, K. N. Tu, C. H. Tung, T. T. Sheng, A. Ploessl, R. Scholz, and U. Goesele, " Twist-type Si bicrystals and compliant substrates prepared from SOI wafers," Phil. Mag. A80, 881-891 (2000).
  26. C. N. Liao, C. Chen, J. S. Huang, and K. N. Tu, "Asymmetrical heating behavior of doped Si channels in bulk Si and in SOI under high current density," J. Appl. Phys. 86, 6895-6901 (1999).
  27. L. A. Chow, Y. H. Xu, B. Dunn, K. N. Tu, and C. Chiang, "Cracking behavior of xerogel silica films on silicon substrates," Appl. Phys. Lett. 73, 2944-2946 (1998).
  28. Yuhuan Xu, Yi-pin Tsai, K. N. Tu, Bin Zhao, Q. Z. Liu, Maureen Brongo, George T. T. Sheng, and C. H. Tung, "Dielectric property and microstructure of a porous polymer materials with ultra-low dielectric constant," Appl. Phys. Lett. 75, 853-855 (1999).
  29. D. W. Zheng, Y. H. Xu, Y. P. Tsai, K. N. Tu, P. Patterson, Bin Zhao, Q. Z. Liu, and Maureen Brongo, "Mechanical property measurement of thin polymeric low dielectric constant films using bulge testing methods," Appl. Phys. lett., 76, 2008-2010 (2000).
  30. Y. H. Xu, Y. P. Tsai, D. W. Zheng, K. N. Tu, C. W. Ong, C. L. Choy, Bin Zhao, Q. Z. Liu, and Maureen Brongo, "Measurement of mechanical properties for dense and porous polymer films having a low dielectric constant," J. Appl. Phys., 88, 5744-5750 (2000).
  31. L. A. Chow, B. Dunn, K. N. Tu, and C. Chiang, "The mechanical properties of xerogel silica films derived from stress versus temperature and cracking experiements," J. Appl. Phys., 87, 7788-7792 (2000).

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f. Diffusion and Reactions in High Tc Superconducting Oxide

  1. K.N. Tu, S.I. Park and C.C. Tsuei, "Diffusion of Oxygen in Superconduction YBa2Cu3O7-8 Oxide upon Annealing in Helium and Oxygen Ambients", Appl. Phys. Lett. 51, 2158-2160 (1987).
  2. S.I. Park, C.C. Tsuei, and K.N. Tu, "Effect of Oxygen-Deficiency on Superconducting and Normal Conductiong Properties of YBa2Cu3O7-8 Oxide," Phys. Rev. B (Rapid Communications) 37, 2305-2308 (1988).
  3. K.N. Tu, C.C. Tsuei, S.I. Park and A. Levi, "Oxygen Diffusion in superconducting YBa2Cu3O7-8 Oxides in Helium and Oxygen Ambients", Phys. Rev. B 38, 772-775 (1988).
  4. K. N. Tu, N.C. Yeh, S.I. Park and K.N. Tu, "Thermal Recovery of Oxygen-Deficient Superconducting YBa2Cu3O7-8 in oxygen ambient." Phys. Rev. B38 (Rapid Communications) 5118-5121 (1988).
  5. N. C. Yeh, K. N. Tu, S. I. Park and C. C. Tsuei, "Effect of oxygen distribution on Resistivity variation in superconducting YBa2Cu3O7-8 oxides (0 = d < 0.7)" Phys. Rev. B38 7087-7090 (1988).
  6. K.N. Tu, N.C. Yeh, S.I. Park and C.C. Tsuei, "Diffusion of oxygen in superconducting YBa2Cu3O7-8 ceramic oxides", Phys. Rev. B 39, 304-314 (1989).
  7. A. Schrott, K.N. Tu, N.C. Yeh, G. Singco, C.C. Tsuei and A. Levi "Effects of Ag on reduction of surface barrier of depletion of oxygen from YBCO ceramic oxides", Phys. Rev. B 39, 2910 - 2913 (1989).
  8. Jian Li, S. Q. Wang, J. W. Mayer, and K. N. Tu, "Oxygen diffusion Induced phase boundary migration in copper oxide thin films," Phys. Rev. B 39, 12367-12370, (1989).
  9. L. T. Shi and K. N. Tu, "Thermogravimetric study of the recovery of oxygen-deficient superconducting YBa2Cu3O7-8 oxides in ambient oxygen," Appl. Phys. Lett. 55, 1351-1353 (1989).
  10. A. G. Schrott, G. Singco, and K. N. Tu, "Surface segregation of Ba in polycrystalline YBCO oxides: The effect of silver," Appl. Phys. Lett. 55, 2126-2128 (1989).
  11. A.D. Marwick, G.J. Clark, K.N. Tu, D.S. Yec, C. Lee, U.N. Singh, J. Doyle and J.J. Cuomo, "Annealing of ion implant damage in the high temperature superconductor YBa2Cu3O7-x," Nuclear Instruments and Methods, B 40/41 612-614 (1989).
  12. L. T. Shi and K. N. Tu, "Formation of a stable shell of YBa2Cu3O8 upon oxygen outdiffusion from superconductiong YBa2Cu3O7 - d oxides," Appl. Phys. Lett. 59 2040-2042 (1991).
  13. R. S. Liu, S. Y. Lin, K. N. Tu, P. P. Edwards and W. Y. Liang, "Dependence of the decoupling temperature of TlBaCaCuO on applied magnetic field and oxygen stoichiometry," Physica C, 185-189 , 1805-1806 (1991).
  14. J. Li, J. W. Mayer and K. N. Tu, "Nucleation and growth of Cu2O in the reduction of CuO thin films," Phys. Rev. B 45, 5683-5686 (1992).
  15. J. R. LaGraff, G. Z. Pan, and K. N. Tu, "Si ion implantation of STO passivated YBCO films for multi-layer processing," Physics C, 338, 269 (2000).

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g. Phase Change Driven by High Electric and Magnetic Field

  1. Weijia Wen, D. W. Zheng, and K. N. Tu, "In-situ time response measurement of the microspheres dispersed in electrorheological fluids, " Phys. Rev. E57, 4516-4519 (1998).
  2. Weijia Wen, D. W. Zheng, K. N. Tu, "Fractal or Chain? Which is the preferred spatial configuration in field-induced solid particle/liquid phase separation?" Phys. Rev. E58, 7682-7685 (1998).
  3. Weijia Wen, D. W. Zheng, and K. N. Tu, "Experimental investigation for the time- dependent effect in electrorheological fluids under time-regulated high pulse electric field," Review of Scientific Instruments, 69, 3573-3576 (1998).
  4. Weijia Wen, F. Kun, K. F. Pal, D. W. Zheng, and K. N. Tu, "Aggregation kinetics and stability of structures formed by magnetic microspheres," Phys. Rev. E59, R4758-R4761, (1999).
  5. Weijia Wen, Ning Wang, D. W. Zheng, and K. N. Tu, "Two and three-dimensional matrixes formed by magnetic microspheres," J. Materials Research, 14, 1186-1189 (1999).
  6. Weijia Wen, D. W. Zheng, and K. N. Tu, "Chain/column evolution and corresponding electrorheological effect," J. Appl. Phys. 85, 530-533 (1999).
  7. F. Kun, K. F. Pal, W. Wen, and K. N. Tu, " Break-up of dipolar rings under an external magnetic field," Physics Lett., 277, 287-293 (2000).
  8. F. Kun, W. Wen, K.F. Pal, and K. N. Tu, "Break-up of dipolar rings under a perpendicular magnetic field," Phys. Rev. E64, 061503-1 to -8 (2001).

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h. Electromigration and Creep in Thin Films

  1. K.N. Tu, "Electromigration in stressed thin films," Phys. Rev. B45, 1409-1413 (1992).
  2. K.N. Tu and L.M. Brown, "Grain boundary electromigration and creep," Materials Chemistry and Physics, 32, 49-55 (1992).
  3. M. A. Korhonen, P. Borgesen, K.N. Tu, and Che-Yu Li, "Stress evolution due to electromigration in confined metal Lines," J. Appl. Phys., 73, 3790-3799 (1993).
  4. L.T. Shi and K.N. Tu, "Finite Element Modeling of Stress Distribution and Migration in Interconnecting Studs of a 3-Dimensional Multi-Level Device Structure," Appl. Phys. Lett. 65, 1516-1518 (1994).
  5. H. K. Liou, J. S. Huang, and K. N. Tu, "Oxidation of Cu and Cu3Ge thin films," J. Appl. Phys., 77, 5443-5445 (1995).
  6. L. T. Shi, and K. N. Tu, "Finite element stress analysis of failure mechanism in a multi-level metallization structure," J. Appl. Phys., 77, 3037-3041 (1995).
  7. K. L. Lee, C. K. Hu, and K. N. Tu, "In-situ SEM comparison studies on electromigration of Cu and Cu(Sn) alloy for advanced chip interconnects," J. Appl. Phys., 78, 4428-4437 (1995).
  8. J. S. Huang, H. K. Liou, and K. N. Tu, "Polarity effect of electromigration in Ni2Si contacts on Si," Phys. Rev. Lett., 76, 2346-2349 (1996).
  9. J. S. Huang and K. N. Tu, "Novel dopant activation of heavily-doped p+-Si by high current density," Phys. Rev. Lett., 77, 4926-4929 (1996).
  10. J. S. Huang, J. Zhang, A. Cruves, and K. N. Tu, "Grain growth in bulk Cu and Cu(Sn) alloys," Materials Chemistry and Physics, 49, 33-41 (1997).
  11. J. S. Huang, S. S. Huang, K. N. Tu, F. Deng, S. S. Lau, S. L. Cheng and L. J. Chen, "Kinetics of Cu3Ge formation and reaction with Al," J. Appl. Phys., 82,644-649 (1997).
  12. J. S. Huang, K. N. Tu, S. W. Bedell, W. A. Lanford, S. L. Cheng, J. B. Lai, and L.J. Chen, "Polarity effect on failure of Ni and Ni2Si contacts on Si, " J. Appl. Phys., 82, 2370-2377 (1997).
  13. J. S. Huang, C. N. Liao, K. N. Tu, S. L. Cheng and L. J. Chen, "Abnormal electrical behavior and phase changes in implanted p+ and n+ -Si channels under high current densities," J. Appl. Phys. 84, 4788-4796 (1998).
  14. Chih Chen, J. S. Huang, C. N. Liao and K. N. Tu, "Dopant activation of heavily doped SOI by high density currents," J. Appl. Phys., 86, 1552-1557 (1999)
  15. C. N. Liao, Chih Chen and K. N. Tu, "Thermoelectric properties of silicon thin film in SOI," J. Appl. Phys.86, 3204-3208 (1999)
  16. K. N. Chen, H. H. Lin, S. L. Cheng, Y. C. Peng, G. H. Shen, L. J. Chen, C. R. Chen, J. S. Huang, and K. N. Tu, "Silicide formation in implanted channels and interfacial reactions of metal contacts under high current density," J. Mater. Res. 14, 4720-4726 (1999).
  17. J. S. Huang, Chih Chen, C. C. Yeh, K. N. Tu, T. L. Shofner, J. D. Drown, R. B. Irwin, and C. B. Vartuli, "Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator," J. Mater. Res., 15, 2387-2392 (2000).
  18. K. N. Tu, C. C. Yeh, C. Y. Liu, and Chih Chen, "Effect of current crowding on vacancy diffusion and void formation in electromigration," Appl. Phys. lett., 76, 988-990 (2000).
  19. C. C. Yeh and K. N. Tu, "Numerical simulation of current crowding phenomena and their effects on electromigration in VLSI interconnects," J. Appl. Phys., 88, 5680-5686 (2000).
  20. Everett C. C. Yeh and K. N. Tu, "Effects of contact resistance and film thickness on current crowding and critical product of electromigration in Blech structures," J. Appl. Phys., 89, 3203-3208 (2001).
  21. K. N. Tu, response to comments on "Effect of current crowding on vacancy diffusion and void formation in electromigration," Appl. Phys. Lett. , 79, 1063 (2001).
  22. J. S. Huang, Everett C. C. Yeh, Z. B. Zhang, and K. N. Tu, "The effect of contact resistance on current crowding and electromigration in ULSI multi-level interconnects," Materials Chemistry and Physics, 77, 377-383 (2003).

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i. Kinetic Theory of Flux-driven Phase Changes

  1. A. M. Gusak and K. N. Tu, "Kinetic theory of flux-driven ripening," Phys. Rev. B 66, 115403-1 to -14 (2002).
  2. K. N. Tu, A. M. Gusak and I. Sobchenko, "Linear rate of grain growth in thin films during deposition," Phys. Rev. B67 (2003) (in press, #034312PRB).
  3. A. M. Gusak and K. N. Tu, "Theory of normal grain growth in normalized size space," Acta Mater. (in Press).

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j. Miscellaneous

  1. K.N. Tu, "Coincidence Diffraction," Scripta Met., 4, 959 (1970).
  2. K.N. Tu, "Calculation of the Density of Lattice Coincidence Sites for an Arbitrary Boundary Plane in Cubic Metals," Scripta Met., 5, 537 (1971).
  3. K.Y. Ahn, K. N. Tu and W. Reuter, "Preparation of Structure of Fe-Doped EuO Thin Films," J. of Appl. Phys. 42, 1769 (1971).
  4. K.N. Tu, K.Y. Ahn and J.C. Suits, "Epitaxial Growth of EuS Films and Magnetio-optical Properties," IEEE Trans. Mag. MAG-8, 651 (1972).
  5. M.I. Nathan, J.E. Smith, Jr. and K.N. Tu, "Raman Spectra of Glassy Carbon," J. Appl. Phys. , Jr. and K.N. Tu, "Raman Spectra of Glassy Carbon," J. Appl. Phys. 45, 2370 (1974).
  6. G. Ottaviani, F. Nava, G. Oueirolo, G. Iannuzzi, G. De Santi and K.N. Tu, "Oxygen Dissolution in Titanium at Low Temperatures," Thin Solid Films. 146, 201-207 (1987).
  7. D. W. Zheng, Xinhua Wang, K. K. Shyu, C. T. Chang, Y. Guo, V. Sarihari, Weijia Wen, and K. N. Tu, "A study of local stress using stress-absorbing Si diaphragm," J. Vac. Sci. Tech., B17, 2178-2181 (1999).
  8. P. S. Nam, L. M. Ferreira, T. Y. Lee, and K. N. Tu, "Study of grass formation in GaAs backside via etching using inductively coupled plasma system," J. Vac. Sci. Tech., B18, 2780-2784 (2000).
  9. Z. B. Zhang, J. S. Huang, M. Twiford, E. Martin, N. Layadi, A. Salah, B. Bhowmik, D. Vitkavago, S. Lytle, E. C. C. Yeh, and K. N. Tu, "A robust multilevel interconnect module for sub-quarter-micrometer complementary metal oxide semiconductor technology integration," J. of Electrochemical Society, 149, G324-G329 (2002).
  10. D. W. Zheng, X. H. Wang, K. Shyu, Chih Chen, C. T. Chang, K. N. Tu, A. J. Mal, and Y. F. Guo, "Stress relaxation of a patterned microstructure on a diaphragm," J. Materials Research, 17, 1795-1802 (2002).

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