Scanning Tunneling Microscopy of III-V Compound Semiconductor Surfaces |
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In our facility, we have a Park Scientific scanning tunneling microscope/ atomic force microscope. We have investigated the surface structures of many III-V compound semiconductors produced in the MOCVD reactor. Some of the results are highlighted below. |
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© Copyright 1996-2007, R. F. Hicks, Semiconductor Material Chemistry and Plasma Processing Laboratory, University of California, Los Angeles. |
| For information, please contact Professor Robert F. Hicks |
| Last Modified May 21, 2007 05:58 PM |
