| Indium phosphide 111(A) surface structures |
Shown below are STM images of the InP (111)A surface structures. To learn more, check out some of our publications. |
(2x2).gif)
Image size = 216 x 216 Å2, inset = 40 x 40 Å2, sample bias = +3.1 V
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InP (111)A-(2x2) reconstruction, In-vacancy structure, similar to the (2x2) observed on GaAs (111)A. |
Image size = 216 x 216 Å2, inset = 35 x 35 Å2, sample bias = + 3.6 V
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InP (111)A-(√3x√3) reconstruction, similar to that observed on SiC (0001) and adsorbate-covered Si (111) surface.
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© Copyright 1996-2007, R. F. Hicks, Semiconductor Material Chemistry and Plasma Processing Laboratory, University of California, Los Angeles. |
| For information, please contact Professor Robert F. Hicks |
| Last Modified May 21, 2007 05:58 PM |
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