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Recent Publications
Correlation between nuclear response and defects in CZT, Hermon, H.; Schieber, M.; James, R.B.; Lee, E.; Cross, E.; Goorsky, M.; Lam, T.; Schlesinger, T.E.; Greaves, M., Proceedings of the SPIE - The International Society for Optical Engineering, vol.3768, (Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, Denver, CO, USA, 19-23 July 1999.) SPIE-Int. Soc. Opt. Eng, 1999. p.138-46. 16 references. Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe, T.T. Lam, C.D. Moore, R.L. Forrest, M.S. Goorsky, S.M. Johnson, D.B. Leonard, T.A. Strand, T.J. deLyon and M.D. Gorwitz, J. Electon. Mater., vol. 29, (no.6), (1999 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA, 22-24 Sept. 1999.) TMS; IEEE, June 2000. p. 804-8. Homogeneity of CdZnTe detectors, Hermon, H.; Schieber, M.; James, R.B.; Lund, J.; Antolak, A.J.; Morse, D.H.; Kolesnikov, N.N.P.; Ivanov, Y.N.; Goorsky, M.S.; Yoon, H.; Toney, J.; Schlesinger, T.E., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip. Netherlands , vol.410, no.1, 1998. p.100-6. Lead iodide X-ray and gamma-ray spectrometers for room and high temperature operation, Hermon, H.; James, R.B.; Lund, J.; Cross, E.; Antolak, A.; Morse, D.H.; Medlin, D.L.; Soria, E.; Van Scyoc, J.; Brunett, B.; Schieber, M.; Schlesinger, T.E.; Toney, J.; Goorsky, M.; Yoon, H.; Burger, A.; Salary, L.; Chen, K.-T.; Chang, Y.-C.; Shah, K., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997). p.361-8. Properties of zinc selenide grown by chemical vapor transport and its application to room-temperature radiation detection, Brunett, B.A.; Toney, J.E.; Yoon, H.; Rudolph, P.; Schieber, M.; Schlesinger, T.E.; Goorsky, M.S.; James, R.B., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997). p.499-503. Comparison between cadmium zinc telluride crystals grown in Russia and in the Ukraine, Hermon, H.; Schieber, M.; James, R.B.; Yang, N.; Antolak, A.J.; Morse, D.H.; Kolesnikov, N.N.P.; Ivanov, Yu.N.; Komar, V.; Goorsky, M.S.; Yoon, H.; Toney, .; Schlesinger, T.E. in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997). p.13-18. Influence of structural defects and zinc composition variation on the device response of Cd/sub 1-x/Zn/sub x/Te radiation detectors, Yoon, H.; Van Scyoc, J.M.; Gilbert, T.S.; Goorsky, M.S.; Brunett, B.A.; Lund, J.C.; Hermon, H.; Schieber, M.; James, R.B., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997). p.115-20. Study of the homogeneity of cadmium zinc telluride detectors, Hermon, H.; Schieber, M.; Yang, N.; James, R.B.; Kolesnikov, N.N.P.; Komar, V.; Goorsky, M.S.; Yoon, H.; Toney, J.; Schlesinger, T.E., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997). p.223-8. Mapping high-pressure Bridgman Cd/sub 0.8/Zn/sub 0.2/Te, Schieber, M.; Hermon, H.; James, R.B.; Lund, J.; Antolak, A.; Morse, D.; Kolesnikov, N.N.; Ivanov, Yu.N.; Goorsky, M.S.; Van Scyoc, J.M.; Yoon, H.; Toney, J.; Schlesinger, T.E.; Doty, F.P.; Cozzatti, J.P.D., IEEE Trans. Nucl. Sci., vol.44, no.6, pt.3, 1997. p.2566-70. Investigation of the effects of polishing and etching on the quality of Cd/sub 1-x/Zn/sub x/Te using spatial mapping techniques, Yoon, H.; Van Scyoc, J.M.; Goorsky, M.S.; Hermon, H.; Schieber, M.; Lund, J.C.; James, R.B., J. Electron. Mater., vol.26, no.6, 1997. p.529-33. Growth and characterization of p-type Cd/sub 1-x/Zn/sub x/Te x 0.2, 0.3, 0.4, Kolesnikov, N.N.; Kolchin, A.A.; Alov, D.L.; Ivanov, Yu.N.; Chernov, A.A.; Schieber, M.; Hermon, H.; James, R.B.; Goorsky, M.S.; Yoon, H.; Toney, J.; Brunett, B.; Schlesinger, T.E., J. Cryst. Growth, vol.174, no.1-4, 1997. p.256-62. Evaluation of Russian-grown Cd/sub0.8/Zn/sub 0.2/Te, Schieber, M.M.; Hermon, H.; James, R.B.; Lund, J.C.; Antolak, A.J.; Morse, D.H.; Kolesnikov, N.N.; Ivanov, Yu.N.; Goorsky, M.S.; Yoon, H.; Toney, J.E.; Schlesinger, T.E., Proc. SPIE - Int. Soc. Opt. Eng., vol.3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, 1997. p.305-10. X-ray diffuse scattering for evaluation of wide bandgap semiconductor nuclear radiation detectors, Goorsky, M.S.; Yoon, H.; Schieber, M.; James, R.B.; McGregor, D.S.; Natarajan, M., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.6-9. Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers, McGregor, D.S.; Antolak, A.J.; Cross, E.S.; Fang, Z.-Q.; Goorsky, M.S.; Henry, R.L.; James, R.B.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Van Scyoc, J.; Yoon, H., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and –Ray Detectors, Associated Electronics and Applications. 1996. p.84-7. Uniformity of Cd/sub 1-x/Zn/sub x/Te grown by high-pressure, Bridgman, Toney, J.E.; Brunett, B.A.; Schlesinger, T.E.; van Scyoc, J.M.; James, R.B.; Schieber, M.; Goorsky, M.; Yoon, H.; Eissler, E.; Johnson, C., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.132-5. Characterization of lead iodide for nuclear spectrometers, Schlesinger, T.E.; James, R.B.; Schieber, M.; Toney, J.; Van Scyoc, J.M.; Salary, L.; Hermon, H.; Lund, J.; Burger, A.; Chen, K.-T. Cross, E.; Soria, E.; Shah, K.; Squillante, M.; Yoon, H.; Goorsky, M., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.193-7. Defect characterization of etch pits in ZnSe based epitaxial layers, U'Ren, G.D.; Goorsky, M.S.; Meis-Haugen, G.; Law, K.K.; Miller, T.J.; Haberern, K.W., Appl. Phys. Lett., vol.69, no.8, 1996. p.1089-91. Material inhomogeneities in Cd/sub 1-x/Zn/sub x/Te and their effects on large volume gamma-ray detectors, Van Scyoc, J.M.; Lund, J.C.; Morse, D.H.; Antolak, A.J.; Olsen, R.W.; James, R.B.; Schieber, M.; Yoon, H.; Goorsky, M.S.; Toney, J.; Schlesinger, T.E., J. Electron. Mater., vol.25, no.8, 1996. p.1323-7. Mapping high pressure Bridgman Cd/sub 0.8/Zn/sub 0.2/Te from Russia, Schieber, M.; Hermon, H.; James, R.B.; Lund, J.; Antolak, A.; Morse, D.; Kolesnikov, N.N.; Ivanov, Yu.N.; Goorsky, M.S.; Van Scyoc, J.M.; Yoon, H.; Toney, J.; Schlesinger, T.E.; Doty, F.P.; Cozzatti, J.P.D., vol.1 , in IEEE Nuclear Science Symposium, edited by: Del Guerra, A. (New York, NY, USA: IEEE, 1996). p.647-50. Nondestructive analysis of structural defects in wide bandgap II-VI heterostructures, Goorsky, M.S.; Lindo, S.E.; Guha, S.; Haugen, G.M., J. Electron. Mater., vol.25, no.2, 1996. p.235-8. Bulk and surface stoichiometry
of vapor grown mercuric iodide crystals, Schieber, M.; Roth,
M.; Yao, H.; DeVries, M.; James, R.B.; Goorsky, M., J.
Cryst. Growth, vol.146, no.1-4, 1995. p.15-22.
Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation, Chen, T.H.; Huang, Y.S.; Lin, D.Y.; Pollak, F.H.; Goorsky, M.S.; Streit, D.C.; Wojtowicz, M. Journal of Applied Physics, vol.88, (no.2), AIP, 15 July 2000. p.883-8. Lattice tilt and relaxation in InGaP/GaAs/Ge solar cells on miscut substrates, Hess, R. R.; Moore, C. D.; Goorsky, M. S., J. Phys. D, vol. 32, no. 10A, 1999. p.A16-A20. Atomic structure of In/sub x/Ga/sub 1-x/As/GaAs 001 2*4 and 3*2 surfaces, Li, L.; Han, B.K.; Hicks, R.F.; Yoon, H.; Goorsky, M.S., Ultramicroscopy, vol.73, no.1-4, 1998. p.229-35. Characterization of InGaAs/GaAs 001 films grown by metalorganic vapor phase epitaxy using alternative sources, Han, B.-K.; Li, L.; Kappers, M.J.; Hicks, R.F.; Yoon, H.; Goorsky, M.S.; Higa, K.T., J. Electron. Mater., vol.27, no.2, 1998. p.81-4. The role of substrate quality on misfit dislocation formation in pseudomorphic high electron mobility transistor structures, Meshkinpour, M.; Goorsky, M.S.; Jenichen, B.; Streit, D.C.; Block, T.R., J. Appl. Phys., vol.81, no.7,1997. p.3124-8. Evaluating epitaxial growth stability, Christensen, D.H.; Hill, J.R.; Hickernell, R.K.; Matney, K.; Goorsky, M.S., Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol., vol.44, no.1-3, 1997. p.113-16. Effect of interface defect formation on carrier diffusion and luminescence in In/sub 0.2/Ga/sub 0.8/As/Al/sub x/Ga/sub 1-x/As quantum wells, Rich, D.H.; Rammohan, K.; Lin, H.T.; Tang, Y.; Meshkinpour, M.; Goorsky, M.S., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , vol.14, no.4 , 1996. p.2922-35. The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer, McGregor, D.S.; Antolak, A.J.; Chui, H.C.; Cross, E.S.; Fang, Z.-Q.; Flatley, J.E.; Goorsky, M.S.; Henry, R.L.; James, R.B.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.W.; Pocha, M.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Van Scyoc, J.; Yoon, H.; Wang, C.L., IEEE Trans. Nucl. Sci. USA , vol.43, no.3, pt.2, (IEEE, 1996). p.1397-406. Complete p-type activation in vertical-gradient freeze GaAs co-implanted with gallium and carbon, Horng, S.T.; Goorsky, M.S., Appl. Phys. Lett., vol.68, no.11, 1996. p.1537-9. Degradation of InGaAs high electron mobility transistors: the role of channel composition and thickness, Meshkinpour, M.; Goorsky, M.S.; Streit, D.C.; Block, T.R.; Wojtowicz, M., Symposium, Defect and Impurity Engineered Semiconductors and Devices, edited by: Ashok, S.; Chevallier, J.; Akasaki, I.; Johnson, N.M.; Sopori, B.L.. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.783-7. Effect of substrate miscut on the structural properties of InGaAs linear graded buffer layers grown by molecular-beam epitaxy on GaAs, Eldredge, J.W.; Matney, K.M.; Goorsky, M.S.; Chui, H.C.; Harris, J.S., Jr., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , vol.13, no.2 , 1995. p.689-91. Diffuse X-ray scattering from misfit dislocations at semiconductor hetero-interfaces, Goorsky, M.S.; Meshkinpour, M.; Streit, D.C.; Block, T.R., J. Phys. D, Appl. Phys., vol.28, no.4A, 1995. p.A92-6. Role of misfit dislocations on pseudomorphic high electron mobility transistors, Meshkinpour, M.; Goorsky, M.S.; Chu, G.; Streit, D.C.; Block, T.R.; Wojtowicz, M., Appl. Phys. Lett., vol.66, no.6 , 1995. p.748-50. The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer, McGregor, D.S.; Antolak, A.J.; Chui, H.C.; Cross, E.S.; Fang, Z.-Q.; Goorsky, M.S.; Henry, R.L.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.W.; Pocha, M.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Yoon, H.; Wang, C.L., , P.A. in IEEE Nuclear Science Symposium and Medical Imaging Conference Record, edited by: Moonier, (New York, NY, USA: IEEE, 1995). p.85-9. Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis, Matney, K.; Goorsky, M.S., J. Cryst. Growth, vol.148, no.4, 1995. p.327-35. Period deviations in distributed Bragg reflectors: X-ray diffraction and optical reflectivity measurements, Matney, K.; Goorsky, M.S.; Tartaglia, J.; Rai, R.; Parsons, C., in Proceedings of the Twenty-First International Symposium on Compound Semiconductors, edited by: Goronkin, H.; Mishra, U., (Bristol, UK: IOP Publishing, 1995). p.553-8. Layer tilt and relaxation in InGaAs/GaAs graded buffer layers, Matney, K.M.; Eldredge, J.W.; Goorsky, M.S., in Strained Layer Epitaxy - Materials, Processing, and Device Applications, edited by: Fitzgerald, E.A.; Hoyt, J.; Cheng, K.-Y.; Bean, J. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.73-8. Strain and mosaic spread of carbon and gallium co-implanted GaAs, Horng, S.T.; Goorsky, M.S.; Madok, J.H.; Haegel, N.M., J. Appl. Phys., vol.76, no.4 , 1994. p.2066-9. Correlation of interface recombination and dislocation density at GaInP/GaAs heterojunctions, Mullenborn, M.; Matney, K.; Goorsky, M.S.; Haegel, N.M.; Vernon, S.M., J. Appl. Phys., vol.75, no.5 , 1994. p.2418-20. Structural properties of highly mismatched InGaAs-based devices grown by molecular beam epitaxy on GaAs substrates, Goorsky, M.S.; Eldredge, J.W.; Lord, S.M.; Harris, J.S., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , vol.12, no.2, 1994. p.1034-7. The relationship between InGaAs channel layer thickness and device performance in high electron mobility transistors, Meshkinpour, M.; Goorsky, M.S.; Streit, D.C.; Block, T.; Wojtowicz, M.; Rammohan, K.; Rich, D.H. , in Compound Semiconductor Epitaxy Symposium, edited by: Tu, C.W.; Kolodziejski, L.A.; McCrary, V.R. (Pittsburgh, PA, USA: Mater. Res. Soc, 1994). p.327-32. Anisotropic structural and electronic
properties of InGaAs/GaAs heterojunctions, Goldman, R.S.;
Rammohan, K.; Raisanen, A.; Goorsky, M.; Brillson, L.J.; Rich,
D.H.; Wieder, H.H.; Kavanagh, K.L., Compound Semiconductor
Epitaxy Symposium, edited by: Tu, C.W.; Kolodziejski, L.A.;
McCrary, V.R. (Pittsburgh, PA, USA: Mater. Res. Soc, 1994).
p.349-54.
Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire 0001, Feiler, D.; Williams, R.S.; Talin, A.A.; Yoon, H.; Goorsky, M.S., J. Cryst. Growth , vol.171, no.1-2, 1997. p.12-20. The role of the low temperature
buffer layer and layer thickness in the optimization of OMVPE
growth of GaN on sapphire, Hersee, S.D.; Ramer, J.; Zheng,
K.; Kranenberg, C.; Malloy, K.; Banas, M.; Goorsky, M., J.
Electron. Mater., vol.24, no.11, 1995. p.1519-23.
Overgrowth of submicron-patterned surfaces for buried index contrast devices, Koontz, E.M.; Petrich, G.S.; Kolodziejski, L.A.; Goorsky, M.S. Semiconductor Science and Technology, vol.15, (no.4), IOP Publishing, April 2000. p.R1-12. Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, Goorsky, M.S.; Sandhu, R.; Hsing, R.; Naidenkova, M.; Wojtowicz, M.; Chin, T.P.; Block, T.R.; Streit, D.C. Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), vol.18, (no.3), (18th North American Conference on Molecular Beam Epitaxy, Banff, Alta., Canada, 10-13 Oct. 1999.) AIP for American Vacuum Soc, May 2000. p.1658-62. Diffraction and topography measurements of InP and InP-based heterostructure devices, Goorsky, M.S., in Physics of Semiconductor Devices, vol.1, edited by: Kumar, V.; Agarwal, S.K., (Delhi, India: Narosa Publishing House, 1998). p.236-43. Analysis of lattice distortions in high-quality InGaAsP epitaxial overgrowth of rectangular-patterned InP gratings, U'Ren, G.D.; Goorsky, M.S.; Koontz, E.M.; Lim, M.H.; Petrich, G.S.; Kolodziejski, L.A.; Wong, V.V.; Smith, H.I.; Matney, K.M.; Wormington, M., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol.16, no.3, 1998. p.1381-4. Preservation of rectangular-patterned InP gratings overgrown by gas source molecular beam epitaxy, Koontz, E.M.; Lim, M.H.; Wong, V.V.; Petrich, G.S.; Kolodziejski, L.A.; Smith, H.I.; Matney, K.M.; U'Ren, G.D.; Goorsky, M.S., Appl. Phys. Lett., vol.71, no.10, 1997. p.1400-2. Substrate crystallinity and the performance of InP-based pseudomorphic high electron mobility transistors, Goorsky, M.S.; Sandhu, R.; Bhasin, G.; Moore, C.D.; Streit, D.G.; Block, T.R.; Wojtowicz, M., Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials Cat. No.97CH36058, (New York, NY, USA: IEEE, 1997). p.264-7. Overgrowth of InGaAsP materials
on rectangular-patterned gratings using GSMBE, Koontz, E.M.;
Lim, M.H.; Wong, V.V.; Petrich, G.S.; Kolodziejski, L.A.; Smith,
H.I.; Goorsky, M.S.; Matney, K.M., Conference Proceedings. 1997
International Conference on Indium Phosphide and Related Materials
Cat. No.97CH36058, (New York, NY, USA: IEEE, 1997). p.62-5.
Surface and Bulk Characterization of Thermally
Induced Defects during Silicon Single Wafer Epitaxy, Petra Feichtinger, Mark S. Goorsky,
Frank Muemmler, Steve Rickborn, Quynh Tran, Dwain Oster and Jim Morel,
submitted for publication in
J. of Crystal Growth (2001).
Misfit Dislocation Nucleation Study in P/P+ Silicon,
P. Feichtinger, M.S. Goorsky, D. Oster, T. D'Silva, and J. Moreland,
accepted for publication in J. Electrochem. Soc.(2001)
Misfit Dislocation Interactions in Low Mismatch P/P+ Silicon,
Petra Feichtinger, Benjamin Poust, Mark .S. Goorsky, Dwain Oster, Juanita Chambers,
and Jim Moreland, accepted for publication in
J.of Physics D (2001)
Misfit dislocation nucleation study in
p/p+ silicon, Petra Feichtinger, Mark S. Goorsky, Dwain
Oster, Tom D'Silva, and Jim Moreland, in High Purity Silicon VI,
C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson,
Editors, p.136 The
Electrochemical Society, Pennington, NJ (2000). Ion implantation effect on dislocation
propagation in pseudomorphically strained p/p+ silicon,
Petra Feichtinger, Ben Poust, Hiroaki Fukuto, Rajinder Sandhu,
Mark S. Goorsky, Dwain Oster, Steve F. Rickborn, and Jim Moreland,
accepted for publication in Si Front-End Processiing-Physics
and Technology of Dopant-Defect Interactions II, A. Agarwal,
L. Pelaz, H.-H. Vuong, P.A. Packan, and M. Kase, Editors,
Materials Research Society,
Pittsburgh NJ 2000. Ion implantation and misfit dislocation
formation in p/p+ silicon, Petra Feichtinger, Hiroaki
Fukuto, Rajinder Sandhu, Benjamin Poust, and Mark S. Goorsky,
accepted for publication in Thin Films-Stresses and Mechanical
Properties VIII, R. Vinci, P. Besser, O. Kraft, N. Moody,
and E. Shaffer, Editors, p.37 Materials
Research Society, Pittsburgh NJ 1999. X-ray topography and diffraction studies
of misfit dislocation nucleation in Si-based structures,
M. S. Goorsky, P. Feichtinger, H. Fukuto, and G. U'Ren, Phil.
Trans. R. Soc. Lond. A 357, 2777 (1999). Misfit dislocation formation in p/p+ silicon
vapor-phase epitaxy, H. Fukuto, P. Feichtinger, G. D.
U'Ren, S. Lindo, M. S. Goorsky, T. Magee, D. Oster, and J.
Moreland, J.
Crystal Growth 209, 716 (2000). Structural defects in p/p+ silicon vapor
phase epitaxy, H. Fukuto, P. Feichtinger, M.S. Goorsky,
T. Magee, D. Oster, and J. Moreland, in Defects in Silicon
III, T. Abe, W.M. Bullis, S. Kobayashi, W. Lin, and P.
Wagner, Editors, p. 162, The
Electrochemical Society, Pennington, NJ (1999). X-ray Topograhpy and diffraction studies
of misfit dislocation nucleation in Si-based structures, Goorsky,
M. S.; Feichtinger, P.; Fukuto, H.; U'Ren, G. D., accepted
in Phil. Trans., 1999. Reduction of the bulk absorption coefficient in silicon optics for high-energy lasers through defect engineering, Goodman, W.A.; Goorsky, M.S., Appl. Opt., vol.34, no.18 , 1995. p.3367-73. Characterization of the damage on the back side of silicon wafers. Defect and Impurity Engineered Semiconductors and Devices, Lindo, S.E.; Matney, K.M.; Goorsky, M.S., edited by: Ashok, S.; Chevallier, J.; Akasaki, I.; Johnson, N.M.; Sopori, B.L. Symposium, Defect and Impurity Engineered Semiconductors and Devices. (Pittsburgh, PA, USA: Mater. Res. Soc., 1995). p.315-20. A systematic study of the structural and luminescence properties of p-type porous silicon, Yoon, H.; Goorsky, M.S. edited by: Ashok, S.; Chevallier, J.; Akasaki, I.; Johnson, N.M.; Sopori, B.L., Symposium, Defect and Impurity Engineered Semiconductors and Devices. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.893-8. Material properties assessment
for large diameter single-crystal silicon, Goodman, W.A.;
Goorsky, M.S., Proc. SPIE - Int. Soc. Opt. Eng., vol.2543, Silicon
Carbide Materials for Optics and Precision Structures, 1995.
p.73-88.
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