Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxy,Petra Feichtinger, Mark S. Goorsky, Frank Muemmler, Steve Rickborn, Quynh Tran, Dwain Oster and Jim Moreland, 2001 ICCG-13.

Re-distribution of hydrogen during low temperature annealing of H-implanted Si, C. Miclaus, M.S. Goorsky, Y.M. Kim, and Y.H.Xie, MRS 2001 Spring Meeting; nominated for the "Best Poster Award"

Misfit dislocation density reduction of InP-based pseudomorphic high electron mobility structures, M.Naidenkova, R. Hsing, M.Goorsky, R. Sandhu, P. Chin, M. Wojtowicz, and T.Block, NA-MBE 2000

Misfit Dislocation Nucleation Study in p/p+ Silicon, P. Feichtinger, M. S. Goorsky, D. Oster, T. D'Silva, and J. Moreland, 198^th Electrochemical Society Meeting.

Hydrophobic wafer bonding using H+ implantation splitting C. Miclaus, M.S. Goorsky, Y.M. Kim, H.J. Kim, Y.H.Xie; Department of Materials Science and Engineering, University of California, Los Angeles; 2000 AACG West 17^th Conference on Crystal Growth and Epitaxy.

Effects of Sb Surfactant-Mediated Growth on Dislocations in Si_1-xGe_x R. L. Forrest, M. S. Goorsky, Department of Materials Science and Engineering, University of California, Los Angeles; J. L. Liu, K. L. Wang, Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, 2000 AACG West 17^th Conference on Crystal Growth and Epitaxy.

Misfit Dislocation Interactions in Low Mismatch p/p+ Silicon Epitaxy, P. Feichtinger, M.S. Goorsky, D. Oster, J. Chambers, and J. Moreland, 2000 XTOP Conference.

Influence of Misfit Dislocations on the Mobility in Pseudomorphic High Electron Mobility Transistors Based on In_xAl_1-xAs / In_0.75Ga_0.25As / InP Structures. R. Hsing, M. Naidenkova, and M.S. Goorsky, R. Sandhu, M. Wojtowicz, T.P. Chin, T.R. Block, and D.C. Streit, 42^nd 2000 Electronic Materials Conference.

The Role of Substrate Miscut on Misfit Dislocation Interactions, P. Feichtinger, B. Poust, M.S. Goorsky, Dept of Materials Science and Engineering, University of California, Los Angeles; D. Oster, T. D'Silva, and J. Moreland, 42^nd 2000 Electronic Materials Conference
Symposium: Point and Extended Defects in Mismatched Materials

Carrier Transport in Partially Relaxed In_0.75Ga_0.25As/InP High Electron Mobility Structures, R. Sandhu, R. Hsing, M. Naidenkova and M. S. Goorsky, Dept of Materials Science and Engineering, University of California, Los Angeles; T.P. Chin, M. Wojtowicz, T. R. Block and D. C. Streit, TRW, Redondo Beach, CA; 12^th 2000 International Indium Phosphide and Related Materials 2000

Ion Implantation Effect On Dislocation Propogation In Pseudomorphically Strained p/p+ Silicon, P. Feichtinger, H. Fukuto, R. Sandhu, B. Poust, and M.S. Goorsky, Dept of Materials Science and Engineering, University of California, Los Angeles; D. Oster, S.F. Rickborn, and J. Moreland, MRS 2000 Spring Meeting.

Structural Defects in p/p+ Silicon Vapor Phase Epitaxy, H. Fukuto, P. Feichtinger, M.S. Goorsky, T. Magee, D. Oster, and J. Moreland, 1999 Spring Meeting of the Electrochemical Society.

Effects of Strain Relaxation on the Carrier Transport Properties on InP-based pseudomorphic High Electron Mobility Structures, R.S. Sandhu, C.D. Moore, M.S. Goorsky, L. Wong, H. Jiang, T.P. Chin, M. Wojtowicz, T.R. Block, and D.C. Streit, 1999 Spring Meeting of the Electrochemical Society.

Dynamics of Misfit Dislocation Formation in p/p+ Vapor Phase Epitaxy, P. Feichtinger, H. Fukuto, M.S. Goorsky, D. Oster, M. Rao, and J. Moreland, MRS 1999 Spring Meeting.

Wafer Edge Misfit Dislocation Nucleation in p/p+ Silicon Vapor Phase Epitaxy, P. Feichtinger, H. Fukuto, M.S. Goorsky, D. Oster and J. Moreland, 1999 Electronic Materials Conference.

Order Parameter Determination using High Resolution X-Ray Diffraction, R.R. Hess, C.D. Moore. R.T. Nielsen and M.S. Goorsky, 9^th Biennial Workshop on Organometallic Vapor Phase Epitaxy.

Single and Double Variant CuPt-B Ordered GaInAs, R. L. Forrest, E. D. Meserole, R. T. Nielsen, M. S. Goorsky, Y. Zhang, A. Mascarenhas, M. Hanna, S. Francoeur, MRS 1999 Fall Meeting.

Influence of the Wafer Edge on Defect Formation in P/P+ Silicon Vapor Phase Epitaxy, P. Feichtinger, B. Poust, H. Fukuto, M.S. Goorsky, D. Oster, J. Chambers, and J. Moreland, MRS 1999 Fall Meeting.

Ion Implantation and Misfit Dislocation Formation in P/P+Silicon, P. Feichtinger, H. Fukuto, R. Sandhu, B. Poust, and M.S. Goorsky, MRS 1999 Fall Meeting.