I was born in Seoul, Korea. I came here (UCLA) in September 1998. During pursuiting master's degree in Seoul, I have done research on CVD (chemical vapor deposition) SiC (silicon carbide) films. At that time, my great concern was to evaluate and characterize the growth behavior and properties of deposited films.
Currently, I am doing some research regarding RF cross talk isolation which has been hot issue in the IC (integrated circuit) for cellular telephone handsets. Right now, digital and RF analog circuits in cellular telephone handsets are on separate chips.
Porous Si has attracted attention because of its unique characteristic such as much higher resistivity than bulk Si by several orders. Through introducing porous Si, we expect that successful isolation can be achieved between digital and RF analog circuit. Eventually, we can get the IC's at which both circuits are integrated in just one chip.
My research interest is focused on selective fabrication of porous Si onto bare Si wafer and developing more compatible processes for Si VLSI technology.