Ya-Hong

Ya-Hong Xie was born in Beijing, China. He came to the United States in pursue of higher education in 1979, in the midst of his study in the physics department of Beijing University as a sophomore. He obtained the B.S. degree in physics from Purdue University in 1981, and the M.S. and Ph.D degrees in electrical engineering from UCLA in 1983 and 1986, respectively. His Ph.D thesis research was on Si molecular beam epitaxy under the guidance of Prof. Kang L. Wang.

Following graduation, Ya-Hong Xie joined AT&T Bell Laboratories (later became Bell Laboratories, Lucent Technologies). From 1986 till 1999, he had been a member of the technical staff at Bell Labs. His research activities during this period include impurity center mediated luminescence in Si (e.g. Er doped Si), light emitting porous Si, GeSi/Si molecular beam epitaxy (MBE), dislocation kinetics in relaxed GeSi/Si heterostructures, strain induced surface roughening in GeSi epitaxial thin films (also known as self-assembled quantum dots), fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si, and the transport properties and device applications of various Si-based heterostructures.

Ya-Hong Xie left Bell Labs in 1999 to join UCLA as a professor of Material Science & Engineering.